參數(shù)資料
型號: M59DR032B
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述: 32兆位的2Mb x16插槽,雙行,第低壓閃存
文件頁數(shù): 34/38頁
文件大小: 270K
代理商: M59DR032B
M59DR032A, M59DR032B
34/38
Table 29. Ordering Information Scheme
Devices are shipped from the factory with the memory content erased (to FFFFh).
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the STMicroelectronics Sales Office nearest to you.
Table 30. Revision History
Example:
M59DR032A
100 ZB
6
T
Device Type
M59
Architecture
D = Dual Bank Page Mode
Operating Voltage
R = 1.8V
Device Function
032A = 32 Mbit (2Mb x16), Dual Bank: 1/8-7/8 partitioning, Top Boot
032B = 32 Mbit (2Mb x16), Dual Bank: 1/8-7/8 partitioning, Bottom Boot
032C = 32 Mbit (2Mb x16), Dual Bank: 1/4-3/4 partitioning, Top Boot
032D = 32 Mbit (2Mb x16), Dual Bank: 1/4-3/4 partitioning, Bottom Boot
032E = 32 Mbit (2Mb x16), Dual Bank: 1/half-1/half partitioning, Top Boot
032F = 32 Mbit (2Mb x16), Dual Bank: 1/half-1/half partitioning, Bottom Boot
Random Speed
100 = 100 ns
120 = 120 ns
Package
N = TSOP48: 12 x 20mm
ZB = FBGA48: 0.75mm pitch
Temperature Range
1 = 0 to 70°C
6 = –40 to 85°C
Option
T = Tape & Reel packing
Date
Revision Details
May 1999
First Issue
09/03/99
FBGA Package Outline drawing change
FBGA Connections change (Table 1, Figure 2A)
t
WHGL
and t
EHGL
Specification change (Table 26, 27)
10/20/99
Daisy Chain diagrams, Package and PCB Connections, added (Figure 16, 17)
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M59DR032B100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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M59DR032B100ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032B100ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032B120N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory