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參數(shù)資料
| 型號： | M59DR032BN |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 20/38頁 |
| 文件大?。?/td> | 270K |
| 代理商： | M59DR032BN |
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M59DR032A, M59DR032B
20/38
Table 22. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; V
DD
= V
DDQ
= 1.65V to 2.2V)
Symbol
Parameter
I
LI
Input Leakage Current
I
LO
Output Leakage Current
Supply Current
(Read Mode)
Supply Current
(Power Down)
I
CC3
Supply Current (Standby)
Supply Current
(Program or Erase)
Note: 1. Sampled only, not 100% tested.
2. V
PP
may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation V
PP
is don’t care.
Test Condition
0V
≤
V
IN
≤
V
DD
0V
≤
V
OUT
≤
V
DD
Min
Typ
Max
±1
±5
Unit
μA
μA
I
CC1
E = V
IL
, G = V
IH
, f = 6MHz
10
20
mA
I
CC2
RP = V
SS
± 0.2V
2
10
μA
E = V
DD
± 0.2V
Word Program, Block Erase
in progress
Program/Erase in progress
in one Bank, Read in the
other Bank
15
50
μA
I
CC4
(1)
10
20
mA
I
CC5 (1)
Supply Current
(Dual Bank)
20
40
mA
I
PP1
V
PP
Supply Current
(Program or Erase)
V
PP
= 12V ± 0.6V
5
10
mA
I
PP2
V
PP
Supply Current
(Standby or Read)
V
PP
≤
V
CC
V
PP
= 12V ± 0.6V
0.2
100
5
μA
μA
V
V
V
400
0.4
V
IL
V
IH
V
OL
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
CMOS
–0.5
V
DDQ
–0.4
V
DDQ
+ 0.4
0.1
I
OL
= 100μA
V
OH
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP (2,3)
V
PP
Supply Voltage
(Program or Erase)
–0.4
11.4
V
DD
+ 0.4
12.6
V
V
Double Word Program
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