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參數(shù)資料
| 型號： | M59DR032BZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 16/38頁 |
| 文件大?。?/td> | 270K |
| 代理商： | M59DR032BZB |
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M59DR032A, M59DR032B
16/38
Table 18. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0016h
Device Size = 2
n
in number of bytes
28h
29h
2Ah
2Bh
2Ch
0001h
0000h
0000h
0000h
0002h
Flash Device Interface Code description: Asynchronous x16
Maximum number of bytes in multi-byte program or page = 2
n
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more con-
tiguous Erase Blocks of the same size. For example, a 128KB device (1Mb)
having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is considered
to have 5 Erase Block Regions. Even though two regions both contain 16KB
blocks, the fact that they are not contiguous means they are separate Erase
Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
Erase Block Region Information
M59DR032A
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
M59DR032B
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
M59DR032A
003Eh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
M59DR032B
0007h
0000h
0020h
0000h
003Eh
0000h
0000h
0001h
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in
size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
Block Region:
e.g. y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
Note: y = 0 value must be used with number of block regions of one as indicated
by (x) = 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR032B100N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR032C100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032C100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032C100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032C100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032C120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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