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參數(shù)資料
| 型號(hào)： | M59DR032BZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 17/38頁 |
| 文件大?。?/td> | 270K |
| 代理商： | M59DR032BZB |
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M59DR032A, M59DR032B
Table 19. Status Register Bits
(1)
Note: 1. Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.
2. In case of double word program DQ7 refers to the last word input.
DQ
Name
Logic Level
Definition
Note
7
Data
Polling
’1’
Erase Complete or erase block
in Erase Suspend.
Indicates the P/E.C. status, check
during Program or Erase, and on
completion before checking bits DQ5
for Program or Erase Success.
’0’
Erase On-going
DQ
Program Complete or data of
non erase block during Erase
Suspend.
DQ
Program On-going
(2)
6
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase or Program On-going
Successive reads output
complementary data on DQ6 while
Programming or Erase operations are
on-going. DQ6 remains at constant
level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
DQ
Program Complete
’-1-1-1-1-1-1-1-’
Erase Complete or Erase
Suspend on currently addressed
block
5
Error Bit
’1’
Program or Erase Error
This bit is set to ’1’ in the case of
Programming or Erase failure.
’0’
Program or Erase On-going
4
Reserved
3
Erase Time
Bit
’1’
Erase Timeout Period Expired
P/E.C. Erase operation has started.
Only possible command entry is Erase
Suspend (ES)
’0’
Erase Timeout Period On-going
An additional block to be erased in
parallel can be entered to the P/E.C:
2
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase Suspend read in the
Erase Suspended Block.
Erase Error due to the currently
addressed block (when DQ5 =
’1’).
Indicates the erase status and allows
to identify the erased block.
1
Program on-going or Erase
Complete.
DQ
Erase Suspend read on non
Erase Suspend block.
1
Reserved
0
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR032B100N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR032C100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032C100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032C100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032C100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032C120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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