參數(shù)資料
型號(hào): M5M5256DFP-70LLI#SM
元件分類(lèi): SRAM
英文描述: 32K X 8 STANDARD SRAM, 70 ns, PDSO28
封裝: 0.450 INCH, LEAD FREE, SOP-28
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 160K
代理商: M5M5256DFP-70LLI#SM
RENESAS LSIs
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
M5M5256DFP,VP-55LL,-70LL,-70LLI,
-55XL,-70XL
PACKAGE
M5M5256DFP : 28 pin 450 mil SOP
M5M5256DVP : 28pin 8 X 13.4 mm TSOP
Single +5V power supply
No clocks, no refresh
Data-Hold on +2.0V power supply
Directly TTL compatible : all inputs and outputs
Three-state outputs : OR-tie capability
/OE prevents data contention in the I/O bus
Common Data I/O
Battery backup capability
Low stand-by current .......... 0.05μA(typ.)
APPLICATION
Small capacity memory units
DESCRIPTION
The M5M5256DFP,VP is 262,144-bit CMOS static RAMs
organized as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
Especially the M5M5256DVP are packaged in a 28-pin thin small
outline package.
FEATURE
PIN CONFIGURATION (TOP VIEW)
1
20μA
(Vcc=5.5V)
(Vcc=5.5V)
5μA
(max)
Stand-by
(max)
Active
(max)
Power supplycurrent
Type
Access
time
50mA
(Vcc=5.5V)
M5M5256DFP,VP-55LL
M5M5256DFP,VP-70LL
55ns
70ns
M5M5256DFP,VP-55XL
M5M5256DFP,VP-70XL
55ns
70ns
(Vcc=3.0V,
Typical)
Outline 28P2C-A (VP)
Outline
28P2W-C (FP)
Oprating
Temperature
M5M5256DFP,VP-70LLI
70ns
0~70°C
-40~85°C
0~70°C
40μA
(Vcc=5.5V)
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
Vcc
/W
A13
A8
A9
A11
/OE
A10
/S
DQ8
DQ7
DQ6
DQ5
DQ4
28
26
25
24
23
22
21
20
19
18
17
16
15
27
1
2
3
4
5
6
7
8
9
10
11
12
13
14
M5M5256DVP
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
Vcc
A13
/W
A8
A9
A11
/OE
A10
/S
DQ8
DQ7
DQ6
DQ5
DQ4
8
9
10
11
12
13
14
21
20
19
18
17
16
15
1
2
3
4
5
6
7
23
24
25
26
27
28
22
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參數(shù)描述
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