參數(shù)資料
型號: MAX9967BRCCQ+D
廠商: Maxim Integrated Products
文件頁數(shù): 20/30頁
文件大?。?/td> 0K
描述: IC DCL DUAL 500MBPS ATE 100TQFP
標準包裝: 90
系列: ATE
邏輯類型: 比較器, 驅動器
電源電壓: -1.5 V ~ 6.5 V
位數(shù): 2
工作溫度: 0°C ~ 70°C
安裝類型: *
封裝/外殼: *
供應商設備封裝: *
包裝: *
MAX9967
Dual, Low-Power, 500Mbps ATE
Driver/Comparator with 35mA Load
______________________________________________________________________________________
27
Temperature Monitor
The MAX9967 supplies a temperature output signal,
TEMP, that asserts a nominal output voltage of 3.43V at
a die temperature of +70°C (343K). The output voltage
increases proportionately with temperature.
Heat Removal
Under normal circumstances, the MAX9967 requires
heat removal through the exposed pad by use of an
external heat sink. The exposed pad is electrically at
VEE potential, and must be either connected to VEE or
isolated.
Power dissipation is highly dependent upon the appli-
cation. The Electrical Characteristics Table indicates
power dissipation under the condition that the source
and sink currents are programmed to 0mA. Maximum
dissipation occurs when the source and sink currents
are both at 35mA, the VDUT_ is at an extreme of the
voltage range (-1.5V or +6.5V), and the diode bridge is
fully commutated. Under these conditions, the addition-
al power dissipated (per channel) is:
If the DUT is sourcing current,
PD = (VDUT_- VEE) x
ISOURCE + (VCC - VEE) x ISINK.
If the DUT is sinking current,
PD = (VCC - VDUT_) x
ISINK + (VCC - VEE) x ISOURCE.
The DUT sources the programmed (low) current when
VDUT_> VCOM_. The path of the current is from the
DUT through the outside of the diode bridge and the
source (low) current source to VEE. The programmed
sink current flows from VCC through the sink (high) cur-
rent source, the inside of the diode bridge, and the
commutation buffer to VEE.
The DUT sinks the programmed (high) current when
VDUT_< VCOM_. The path of the current is from VCC
through the sink (high) current source and the outside
of the diode bridge to the DUT. The programmed
source current flows from VCC through the commutation
buffer, the inside of the diode bridge, and the source
(low) current source to VEE.
Theta J-C of the exposed-pad package is very low,
approximately 3°C/W to 4°C/W. Die temperature is thus
highly dependent upon the heat-removal techniques
used in the application.
Maximum total power dissipation occurs under the fol-
lowing conditions:
VCC = +10.5V
VEE = -6.5V
ISOURCE = ISINK = 35mA for both channels
Load enabled
VDUT_ = +6.5V
VCOM_ < +5.5V
Under these extreme conditions, the total power dissi-
pation is approximately 6W. If the die temperature can-
not be maintained at an acceptable level under these
conditions, use software clamping to limit the load out-
put currents to lower values and/or reduce the supply
voltages.
Chip Information
TRANSISTOR COUNT: 5656
PROCESS: Bipolar
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