參數(shù)資料
型號(hào): MB81V4260S-60
廠商: Fujitsu Limited
英文描述: CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 256K × 16位快速頁(yè)面模式的動(dòng)態(tài)隨機(jī)存儲(chǔ)器(的CMOS 256K × 16位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 23/28頁(yè)
文件大小: 360K
代理商: MB81V4260S-60
23
MB81V4260S-60/MB81V4260S-70
Fig. 16 – CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
(At recommended operating conditions unless otherwise noted.)
Note: Assumes that CAS-before-RAS refresh counter test cycle only.
V
IH
V
IL
V
IH
V
IL
RAS
A
0
to A
8
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
WE
DQ
(Input)
OE
DESCRIPTION
A special timing sequence using the CAS-before-RAS refresh counter test cycle provides a convenient method to verify the
functionality of CAS-before-RAS refresh circuitry. After a CAS-before-RAS refresh cycle, if LCAS or UCAS makes a transition from
High to Low while RAS is held Low, read and write operations are enabled as shown above. Row and column addresses are
defined as follows:
Row Address: Bits A
0
through A
8
are defined by the on-chip refresh counter.
Column Address: Bits A
0
through A
8
are defined by latching levels on A
0
-A
8
at the second falling edge of LCAS or UCAS.
The CAS-before-RAS Counter Test procedure is as follows ;
1) Normalize the internal refresh address counter by using 8 RAS only refresh cycles.
2) Use the same column address throughout the test.
3) Write “0” to all 512 row addresses at the same column address by using CBR refresh counter test cycles.
4) Read “0” written in procedure 3) by using normal read cycle and check; After reading “0” and check are completed
(or simultaneously), write “1” to the same addresses by using normal write cycle (or read-modify-write cycle).
5) Read and check data “1” written in procedure 4) by using CBR refresh counter test cycle for all 512 memory locations.
6) Reverse test data and repeat procedures 3), 4), and 5).
DQ
(Output)
CAS to WE Delay Time
Parameter
Unit
Min.
Max.
ns
No.
Min.
Max.
90
55
55
Symbol
91
30
ns
30
Column Address Hold Time
92
CAS Pulse width
93
RAS Hold Time
80
ns
80
55
ns
55
94
55
ns
55
ns
85
85
CAS Hold Time
95
MB81V4260S-60
MB81V4260S-70
Access Time from CAS
t
FCAC
t
FCAH
t
FCWD
t
FCAS
t
FCSH
t
FRSH
LCAS
or
UCAS
t
ON
t
OEA
t
FCWD
“H” or “L”
Valid Data
HIGH-Z
HIGH-Z
t
OEH
HIGH-Z
VALID DATA IN
COLUMN ADDRESS
t
RP
t
FRSH
t
FCAS
t
FCSH
t
CHR
t
CSR
t
CP
t
ASC
t
RAL
t
AR
t
FCAH
t
RCS
t
RWL
t
WCR
t
DH
t
WP
t
DS
t
DZC
t
OED
t
FCAC
t
DZO
t
OEZ
t
DHR
t
CWL
t
CDD
相關(guān)PDF資料
PDF描述
MB81V4260S-70 CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB81V4265-60 CMOS 256K ×16BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
MB81V4265-70 CMOS 256K ×16BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
MB81V4265S-60 CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
MB81V4265S-60L CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB82 功能描述:RECTIFIER BRIDGE 8A 200V BR-6 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 橋式整流器 系列:- 產(chǎn)品變化通告:Product Discontinuation 14/Mar/2011 標(biāo)準(zhǔn)包裝:1,500 系列:- 電壓 - 峰值反向(最大):1000V 電流 - DC 正向(If):1.5A 二極管類型:單相 速度:標(biāo)準(zhǔn)恢復(fù) >500ns,> 200mA(Io) 反向恢復(fù)時(shí)間(trr):- 安裝類型:表面貼裝 封裝/外殼:4-SMD 包裝:帶卷 (TR) 供應(yīng)商設(shè)備封裝:4-SDIP
MB820 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標(biāo)準(zhǔn)包裝:1 系列:*
MB-8210 制造商:Maxxtro 功能描述:Bulk
MB82101BAN 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS
MB82101BBN 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS