- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377886 > MB81V4405C-60 (Fujitsu Limited) CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級頁面存取模式動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | MB81V4405C-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級頁面存取模式動態(tài)RAM) |
| 中文描述： | 的CMOS 100萬× 4位超頁模式動態(tài)RAM的CMOS（100萬× 4位超級頁面存取模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 24/30頁 |
| 文件大?。?/td> | 348K |
| 代理商： | MB81V4405C-60 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當前第24頁第25頁第26頁第27頁第28頁第29頁第30頁
24
MB81V4405C-60/MB81V4405C-70
Fig. 16 – RAS-ONLY REFRESH (WE = OE = “H” or “L”)
DQ
(Output)
RAS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
CAS
A
0
to A
9
V
OH
V
OL
DESCRIPTION
Refresh of RAM memory cells is accomplished by performing a read, a write, or a read-modify-write cycle at each of 1,024 row
addresses every 16.4-milliseconds. Three refresh modes are available: RAS-only refresh, CAS-before-RAS refresh, and hidden
refresh.
RAS-only refresh is performed by keeping RAS Low and CAS High throughout the cycle; the row address to be refreshed is
latched on the falling edge of RAS. During RAS-only refresh, DQ pins are kept in a high-impedance state.
“H” or “L”
t
RC
t
RP
t
ASR
t
RPC
HIGH-Z
t
RAH
t
OH
t
CRP
t
RAS
t
OFF
ROW ADDRESS
t
CRP
t
CPN
t
CSR
t
CHR
t
RPC
t
CSR
Fig. 17 – CAS-BEFORE-RAS REFRESH (ADDRESSES = OE = “H” or “L”)
DQ
(Output)
RAS
V
IH
V
IL
V
IH
V
IL
CAS
V
OH
V
OL
DESCRIPTION
CAS-before-RAS refresh is an on-chip refresh capability that eliminates the need for external refresh addresses. If CAS is held Low
for the specified setup time (t
CSR
) before RAS goes Low, the on-chip refresh control clock generators and refresh address counter
are enabled. An internal refresh operation automatically occurs and the refresh address counter is internally incremented in prep-
aration for the next CAS-before-RAS refresh operation.
WE must be held High for the specified set up time (t
WSR
) before RAS goes Low in order not to enter “TEST MODE”.
“H” or “L”
t
RC
HIGH-Z
t
RAS
t
RP
t
OFF
t
OH
t
CPN
t
WSR
t
WHR
V
IH
V
IL
WE
相關PDF資料 |
PDF描述 |
|---|---|
| MB81V4405C-70 | CMOS 1M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 1M ×4 位超級頁面存取模式動態(tài)RAM) |
| MB81V4800S-60 | CMOS 512K×8 BIT Fast Page Mode DRAM(CMOS 512K×8位快速頁面存取模式動態(tài)RAM) |
| MB81V4800S-70 | CMOS 512K×8 BIT Fast Page Mode DRAM(CMOS 512K×8位快速頁面存取模式動態(tài)RAM) |
| MB8431-12L | 2K x 8 Bits CMOS Dual-Port Static Random Access |
| MB8431 | 2K x 8 Bits CMOS Dual-Port Static Random Access |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MB82 | 功能描述:RECTIFIER BRIDGE 8A 200V BR-6 RoHS:否 類別:分離式半導體產(chǎn)品 >> 橋式整流器 系列:- 產(chǎn)品變化通告:Product Discontinuation 14/Mar/2011 標準包裝:1,500 系列:- 電壓 - 峰值反向(最大):1000V 電流 - DC 正向(If):1.5A 二極管類型:單相 速度:標準恢復 >500ns，> 200mA（Io） 反向恢復時間(trr):- 安裝類型:表面貼裝 封裝/外殼:4-SMD 包裝:帶卷 (TR) 供應商設備封裝:4-SDIP |
| MB820 | 功能描述:ACCY MOUNT BMM 3/4 58A RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標準包裝:1 系列:* |
| MB-8210 | 制造商:Maxxtro 功能描述:Bulk |
| MB82101BAN | 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
| MB82101BBN | 制造商:MURATA 制造商全稱:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
發(fā)布緊急采購，3分鐘左右您將得到回復。