參數(shù)資料
型號: MB81V4800S-70
廠商: Fujitsu Limited
英文描述: CMOS 512K×8 BIT Fast Page Mode DRAM(CMOS 512K×8位快速頁面存取模式動態(tài)RAM)
中文描述: 的CMOS為512k × 8位快速頁面模式的DRAM(的CMOS為512k × 8位快速頁面存取模式動態(tài)內(nèi)存)
文件頁數(shù): 8/26頁
文件大?。?/td> 328K
代理商: MB81V4800S-70
8
MB81V4800S-60/MB81V4800S-70
I
AC CHARACTERISTICS
(Continued)
(At recommended operating conditions unless otherwise noted.) Notes 3, 4, 5
No.
Parameter
Notes
Symbol
MB81V4800S-60
Min.
15
0
10
85
40
55
MB81V4800S-70
Min.
18
0
10
95
40
60
Unit
Max.
Max.
33
34
35
36
37
38
Write Command to CAS Lead Time
DIN Set Up Time
DIN Hold Time
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS Precharge Time to CAS Active Time
(Refresh Cycles)
CAS Set Up Time for CAS-before-RAS
Refresh
CAS Hold Time for CAS-before-RAS
Refresh
t
CWL
t
DS
t
DH
t
RWD
t
CWD
t
AWD
ns
ns
ns
ns
ns
ns
39
t
RPC
10
10
ns
40
t
CSR
0
0
ns
41
t
CHR
10
10
ns
42
Access Time from OE
t
OEA
20
20
ns
43
Output Buffer Turn Off Delay
from OE
OE to RAS Lead Time for Valid Data
OE Hold Time Referenced to
WE
OE to Data in Delay Time
t
OEZ
15
15
ns
44
t
OEL
10
10
ns
45
t
OEH
0
0
ns
46
t
OED
15
15
ns
47
DIN to CAS Delay Time
t
DZC
0
0
ns
48
DIN to OE Delay Time
t
DZO
0
0
ns
49
50
Column Address Hold Time from RAS
Write Command Hold Time from RAS
t
CDD
t
AR
15
32
15
32
ns
ns
51
DIN Hold Time Referenced to RAS
t
WCR
30
30
ns
52
CAS to Data in Delay Time
t
DHR
30
30
ns
60
Fast Page Mode RAS Pulse Width
Fast Page Mode Read/Write Cycle Time
Fast Page Mode Read-Modify-Write Cycle
Time
t
RASP
60
200000
70
200000
ns
61
t
PC
40
45
ns
62
t
PRWC
80
90
ns
63
Access Time from CAS
Precharge
t
CPA
35
40
ns
64
Fast Page Mode CAS Pulse width
t
CP
10
10
ns
65
Fast Page Mode RAS Hold Time from CAS
Precharge
t
RHCP
35
40
ns
66
Fast Page Mode CAS Precharge to WE De-
lay Time
t
CPWD
55
60
ns
9
10
16
17
17
9, 18
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