參數(shù)資料
型號: MB84VD22183EA-85PBS
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA71
封裝: PLASTIC, BGA-71
文件頁數(shù): 49/64頁
文件大?。?/td> 1177K
代理商: MB84VD22183EA-85PBS
MB84VD2218XEA/H/2219XEA/H-70/85/90
53
Read Cycle (SRAM)
Test Conditions
Output Load : 1 TTL gate and 30 pF
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or VCCs
Timing measurement reference level
Input : 0.5
× VCCs
Output : 0.5
× VCCs
Parameter
Symbol
Value
Unit
70
85
90
MinMax
Read Cycle Time
tRC
70
85
85
ns
Address Access Time
tAA
70
85
85
ns
Chip Enable (CE1s) Access Time
tCO1
70
85
85
ns
Chip Enable (CE2s) Access Time
tCO2
70
85
85
ns
Output Enable Access Time
tOE
35
45
45
ns
LBs, UBs to Output Valid
tBA
70
85
85
ns
Chip Enable (CE1s Low and CE2s High)
to Output Active
tCOE
5
5
5
ns
Output Enable Low to Output Active
tOEE
0
0
0
ns
UBs, LBs Enable Low to Output Active
tBE
0
0
0
ns
Chip Enable (CE1s High or CE2s Low)
to Output High-Z
tOD
25
35
35
ns
Output Enable High to Output High-Z
tODO
25
35
35
ns
UBs, LBs Output Enable to Output
High-Z
tBD
25
35
35
ns
Output Data Hold Time
tOH
10
10
10
ns
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