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參數(shù)資料
| 型號： | MB98A9113 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Low Power Static Random Access Memory Card(1M低功耗靜態(tài)存儲器) |
| 中文描述： | 低功耗靜態(tài)隨機存取記憶卡（1分低功耗靜態(tài)存儲器） |
| 文件頁數(shù)： | 10/32頁 |
| 文件大?。?/td> | 557K |
| 代理商： | MB98A9113 |
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10
MB98A9083x
/
9093x/9103x/9113x
-20
I
DC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.)
Notes:
*1.
This value does not apply to recharge current from system or replaceable lithium battery to
rechargeable battery.
This value does not apply to CE
1
, CE
2
, REG and WE.
This value does not apply to BVD1, BVD2, CD
1
, CD
2
and WP.
This value does not apply to CD
1
and CD
2
.
*2.
*3.
*4.
Parameter
Notes
Symbol
Condition
Min.
Typ.
Max.
Unit
Standby Supply Current
*1
I
SB1
CE
1
, CE
2
≥
V
CC
–0.2 V
CE
1
, CE
2
= V
IH
—
—
0.5
mA
I
SB2
—
—
5.0
mA
Active Supply Current
I
CC1
V
IN
= V
IH
or V
IL
CE
1
, CE
2
= V
IL
, I
OUT
= 0 mA
—
—
50
mA
Operating
Supply Current
MB98A9083x/9093x
I
CC2
V
IN
= V
IH
or V
IL
, Cycle = Min
Duty = 100%, I
OUT
= 0 mA
OE = V
IH
during Write Cycle
—
—
180
mA
MB98A9103x/9113x
—
—
240
Input Leakage Current
*2
I
LI
V
IN
= 0 V to V
CC
–10
—
10
μ
A
Output Leakage Current
*3
I
LI/O
V
OUT
= 0 V to V
CC
,
CE
1
, CE
2
= V
IH
or
OE = V
IH
or WE = V
IL
–10
—
10
μ
A
Output High Voltage
*4
V
OH
I
OH
= –1.0 mA
2.4
—
—
V
Output Low Voltage
V
OL
I
OL
= 2.1 mA
—
—
0.4
V
Fig. 3 – AC TEST CONDITIONS
Input Pulse Levels: 0.6 V to 2.6 V
Input Pulse Rise and Fall Times: 5 ns (Transition between 0.8 V and 2.4 V)
Timing Reference Levels
Input: V
= 0.8 V, V
= 2.4 V
Output: V
OL
= 0.8 V, V
OH
= 2.0 V
* Including Jig and stray capacitance
Output Load
+5 V
R1
R2
C
L
*
D
OUT
(I/O)
R1
R2
CL
Parameters Mesured
Load I
1.8 k
1.8 k
990
990
100 pF
All parameters except t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
RCLZ
, t
ROLZ
, t
RCHZ
, t
ROHZ
, t
WLZ
and t
WHZ
Load II
5 pF
t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
RCLZ
, t
ROLZ
, t
RCHZ
, t
ROHZ
, t
WLZ
and t
WHZ
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