參數(shù)資料
型號: MB98A9113
廠商: Fujitsu Limited
英文描述: Low Power Static Random Access Memory Card(1M低功耗靜態(tài)存儲器)
中文描述: 低功耗靜態(tài)隨機存取記憶卡(1分低功耗靜態(tài)存儲器)
文件頁數(shù): 9/32頁
文件大?。?/td> 557K
代理商: MB98A9113
9
MB98A9083x
/
9093x/9103x/9113x
-20
I
ABSOLUTE MAXIMUM RATINGS (See WARNING)
Notes:
*1.
This value does not apply to the replaceable battery.
This value does not apply to the replaceable battery and data retention.
*2.
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
I
RECOMMENDED OPERATING CONDITIONS
(Referenced to GND)
Note:
* This value does not apply to the replaceable lithium battery. See V
BAT1
in Fig.1.
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device. All
the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representative beforehand.
I
CAPACITANCE
(T
A
= 25
°
C, f = 1 MHz, V
IN
= V
I/O
= GND)
Typ.
Max.
Notes:
*1.
This value does not apply to CE
1
, CE
2
, REG and WE.
This value does not apply to BVD1, BVD2, CD
1
and CD
2
.
*2.
Parameter
Symbol
Value
Unit
Supply Voltage
V
CC
–0.5 to +6.0
V
Input Voltage
V
IN
–0.5 to V
CC
+0.5
V
Output Voltage
V
OUT
–0.5 to V
CC
+0.5
V
°
C
°
C
Ambient Temperature
T
A
–10 to +60 *1
Storage Temperature
T
STG
–20 to +65 *2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
CC
4.75
5.0
5.25
V
Ground
GND
0
V
Input High Voltage
V
IH
2.4
V
CC
+0.3
V
Input Low Voltage
V
IL
–0.3
0.8
V
°
C
Ambient Temperature *
T
A
0
55
Parameter
Notes
Symbol
Min.
Unit
Input Capacitance
*1
C
IN
50
pF
I/O Capacitance
*2
C
I/O
50
pF
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