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參數(shù)資料
| 型號： | MB98A9113 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Low Power Static Random Access Memory Card(1M低功耗靜態(tài)存儲器) |
| 中文描述： | 低功耗靜態(tài)隨機存取記憶卡（1分低功耗靜態(tài)存儲器） |
| 文件頁數(shù)： | 30/32頁 |
| 文件大小： | 557K |
| 代理商： | MB98A9113 |
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MB98A9083x
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9093x/9103x/9113x
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4. SPECIAL MONITORING PINS
4.1 BVD1, BVD2: Voltage Monitoring Pins
WP Switch
WP Pin
Protect
H
Non Protect
L
These pins monitor the voltage of the battery which must be maintained at 2.65 V or greater for data retention. The
condition of the battery is determined by reading the output signals on BVD1 and BVD2.
1. When BVD1=BVD2=V
Battery voltage is sufficient to guarantee data retention; i.e., .2.65 V.
2. When BVD2=V
, BVD1=V
Battery voltage is lower than 2.65 V and should be replaced to safeguard data.
3. When BVD1=BVD2=V
Battery voltage is less than 2.37 V: the level is dangerous. There is a possibility that data has not retained.
*These functions operate over the Recommended Operating Conditions.
4.2 CD
1
, CD
2
: Card Detection Pins
These pins detect the insertion of the card into the system.
(See Fig. 6.)
When the memory card has been correctly inserted, CD
1
and
CD
2
are detected by the system. CD
1
, CD
2
are tied to ground
on the card side as shown in Fig. 6.
4.3 WP: Write Protect Pins
This pin monitors the position of the Write Protect
switch. As shown in Fig. 7, the SRAM card has a Write
Protect switch at the top of the card.
To write to the card, the switch must be turned to the
“Non Protect” position and the WE pin low. L-level is
output on the WP pin.
To prevent writing to the card, the switch must be
turned to the “Protect” position. H-level is output on
the WP pin.
(A)
(B)
V
CC
CD
1
CD
2
system side
card side
- Fig. 6 -
V
CC
- Fig. 7 -
Non Protect
SRAM Card
Write Protect Switch
Battery Holder
Protect
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