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參數(shù)資料
| 型號(hào)： | MBM29DL64DF-70 |
| 廠商： | Fujitsu Limited |
| 英文描述： | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| 中文描述： | 閃存的CMOS 64米（8的MX 8 / 4的MX 16）位 |
| 文件頁數(shù)： | 11/68頁 |
| 文件大?。?/td> | 854K |
| 代理商： | MBM29DL64DF-70 |
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MBM29DL64DF
-70
11
(Continued)
*1 : Command combinations not described in “MBM29DL64DF Command Definitions” are illegal.
*2 : Both of these reset commands are equivalent.
*3 : Erase Suspend and Erase Resume command are valid only during a sector erase operations.
*4 : This command is valid during Fast Mode.
*5 : The Reset from Fast mode command is required to return to the Read mode when the device is in Fast mode.
*6 : This command is valid while RESET
=
V
ID
(except during HiddenROM mode) .
*7 : Sector Group Address (SGA) with (A
6
, A
3
, A
2
, A
1
, A
0
)
=
(0, 0, 0, 1, 0) .
*8 : The valid address are A
6
to A
0
.
*9 : The HiddenROM Entry command is required prior to the HiddenROM programming.
*10 : This command is valid during HiddenROM mode.
*11 : The data “F0h” is also acceptable.
*12 : Fourth bus cycle becomes read cycle.
Notes :
Address bits A
21
to A
11
=
X
=
“H” or “L” for all address commands except or Program Address (PA) , Sector
Address (SA) , Bank Address (BA) and Sector Group Address (SPA) .
Bus operations are defined in “MBM29DL64DF User Bus Operations (BYTE
=
V
IH
) ” and “MBM29DL64DF
User Bus Operations (BYTE
=
V
IL
) ”.
RA
=
Address of the memory location to be read
IA
=
Autoselect read address that sets both the bank address specified at (A
21
, A
20
, A
19
) and all the
other A
6
, A
3
, A
2
, A
1
, A
0
and (A-
1
) .
PA
=
Address of the memory location to be programmed
Addresses are latched on the falling edge of the write pulse.
SA
=
Address of the sector to be erased. The combination of A
21
, A
20
, A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
and
A
12
will uniquely select any sector.
BA
=
Bank Address. Address setted by A
21
, A
20
, A
19
will select Bank A, Bank B, Bank C and Bank D.
RD
=
Data read from location RA during read operation.
ID
=
Device code/manufacture code for the address located by IA.
PD
=
Data to be programmed at location PA. Data is latched on the rising edge of write pulse.
SPA
=
Sector group address to be protected. Set sector group address and (A
6
, A
3
, A
2
, A
1
, A
0
)
=
(0, 0, 0, 1, 0) .
SGA
=
Sector Group Address. The combination of A
21
to A
12
will uniquely select any sector group.
SD
=
Sector group protection verify data. Output 01h at protected sector group addresses and output
00h at unprotected sector group addresses.
HRA
=
Address of the HiddenROM area
Word Mode : 000000h to 00007Fh
Byte Mode : 000000h to 0000FFh
HRBA
=
Bank Address of the HiddenROM area (A
21
=
A
20
=
A
19
=
V
IL
)
The system should generate the following address patterns :
Word Mode : 555h or 2AAh to addresses A
10
to A
0
Byte Mode : AAAh or 555h to addresses A
10
to A
0
, and A-
1
Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
Command
Sequence
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
555h
AAh
55h
A0h
AAAh
555h
AAAh
HiddenROM
Program
*
9,
*
10
Word
Byte
4
2AAh
555h
(
HRA
)
PA
PD
HiddenROM
Exit *
10
Word
4
555h
AAh
2AAh
55h
(HRBA)
555h
90h
XXXh
00h
Byte
AAAh
555h
(HRBA)
AAAh
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL64DF70PBT | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL64DF70TN | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL800TA | 8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000ucd; Viewing Angle:16 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MBM29DL800BA-90 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Yellow; Luminous Intensity:2500ucd; Viewing Angle:15 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-40 C to +85 C; Color:Yellow; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL64DF70PBT | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL64DF70TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL800BA | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
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