參數(shù)資料
型號(hào): MBM29DL64DF-70
廠商: Fujitsu Limited
英文描述: FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
中文描述: 閃存的CMOS 64米(8的MX 8 / 4的MX 16)位
文件頁數(shù): 31/68頁
文件大?。?/td> 854K
代理商: MBM29DL64DF-70
MBM29DL64DF
-70
31
Erase Suspend/Resume
The Erase Suspend command allows the user to interrupt Sector Erase operation and then reads data from or
programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation
which includes the time-out period for sector erase. Writing the Erase Suspend command (B0h) during the Sector
Erase time-out results in immediate termination of the time-out period and suspension of the erase operation.
Writing the Erase Resume command (30h) resumes the erase operation. The bank address of sector being
erased or erase-suspended should be set when writing the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device takes a maximum
of “t
SPD
” to suspend the erase operation. When the device enters the erase-suspended mode, the
RY/BY output pin is at High-Z and the DQ
7
is at logic “1”, and DQ
6
stops toggling. The user must use the address
of the erasing sector for reading DQ
6
and DQ
7
to determine if the erase operation is suspended. Further writes
of the Erase Suspend command are ignored.
When the erase operation is suspended, the device defaults to the erase-suspend-read mode. Reading data in
this mode is the same as reading from the standard read mode, except that the data must be read from sectors
that have not been erase-suspended. Reading successively from the erase-suspended sector while the device
is in the erase-suspend-read mode may cause DQ
2
to toggle (see the section on “DQ
2
”) .
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate com-
mand sequence for Program. This program mode is known as the erase-suspend-program mode. Again it is the
same with programming in the regular Program mode, except that the data must be programmed to sectors not
being erase-suspended. Reading successively from the erase-suspended sector while the device is in the erase-
suspend-program mode may cause DQ
2
to toggle. The end of the erase-suspended Program operation is
detected by the RY/BY output pin, Data polling of DQ
7
or by the Toggle Bit I (DQ
6
) , which is the same with the
regular Program operation. Note that DQ
7
must be read from the Program address while DQ
6
can be read from
any address within bank being erase-suspended.
To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase
suspended. Any further writes of the Resume command at this point are ignored. Another Erase Suspend
command can be written after the chip resumes erasing.
Fast Mode Set/Reset
Fast Mode function dispenses with the initial two unclock cycles required in the standard program command
sequence by writing the Fast Mode command into the command register. In this mode the required bus cycle
for programming consists of two bus cycles instead of four in standard program command. Do not write erase
command in this mode. The read operation is also executed after exiting from the fast mode. To exit from this
mode, write Fast Mode Reset command into the command register. The first cycle must contain the bank address.
The V
CC
active current is required even if CE
=
V
IH
during Fast Mode.
Fast Programming
During Fast Mode, programming is executed with two bus cycle operation. The Embedded Program Algorithm
is executed by writing program set-up command (A0h) and data write cycles (PA/PD) . See “(8) Embedded
Programming Algorithm for Fast Mode” in
I
FLOW CHART. The address of the program set-up command is
don’t care. Fast Program command, with the exception of its process taken place at the two bus cycles, emulates
the conventional programming so that the programming termination can be detected by Data polling of DQ
7
,
Toggle Bit I (DQ
6
) and RY/BY output pins.
Extended Sector Group Protection
In addition to normal sector group protection, the device has Extended Sector Group Protection as extended
function. This function enables protection of the sector group by forcing V
ID
on RESET pin and writes a command
sequence. Unlike conventional procedures, it is not necessary to force V
ID
and control timing for control pins.
The extended sector group protection requires V
ID
on RESET pin only. With this condition the operation is initiated
by writing the set-up command (60h) in the command register. Then the sector group addresses pins (A
21
, A
20
,
A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
and A
12
) and (A
6
, A
3
, A
2
, A
1
, A
0
)
=
(0, 0, 0, 1, 0) should be set to the sector group
to be protected (setting V
IL
for the other addresses pins is recommended) , and an extended sector group
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