參數(shù)資料
型號: MBM29F002T
廠商: Fujitsu Limited
英文描述: 2M (256K ×8) Bit Flash Memory( 單5V 電源電壓256K ×8位閃速存儲器)
中文描述: 200萬(256K × 8)位快閃記憶體(單5V的電源電壓256K × 8位閃速存儲器)
文件頁數(shù): 10/52頁
文件大?。?/td> 591K
代理商: MBM29F002T
10
MBM29F002T/002B/002ST/002SB
-70/-90/-12
Legend:
L = V
IL
, H = V
IH
, X = V
IL
or V
IH
,
= Pulse Input. See DC Characteristics for voltage levels.
Notes:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer
to Table 6.
2. Refer to the section on Sector Protection.
3. WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
Table 2 MBM29F002T/002B/002ST/002SB User Bus Operations
Operation
CE
OE
WE
A
0
A
1
A
6
A
9
A
10
DQ
0
to DQ
7
RESET
Auto-Select Manufacturer Code (1)
L
L
H
L
L
L
V
ID
L
Code
H
Auto-Select Device Code (1)
L
L
H
H
L
L
V
ID
L
Code
H
Read (3)
L
L
H
A
0
A
1
A
6
A
9
A
10
D
OUT
H
Standby
H
X
X
X
X
X
X
X
HIGH-Z
H
Output Disable
L
H
H
X
X
X
X
X
HIGH-Z
H
Write
L
H
L
A
0
A
1
A
6
A
9
A
10
D
IN
H
Enable Sector Protection (2)
L
V
ID
X
X
L
V
ID
X
X
H
Verify Sector Protection (2)
L
L
H
L
H
L
V
ID
L
Code
H
Temporary Sector Unprotection
X
X
X
X
X
X
X
X
X
V
ID
Reset (Hardware)/Standby
X
X
X
X
X
X
X
X
HIGH-Z
L
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