參數(shù)資料
型號(hào): MBM29F016
廠商: Fujitsu Limited
英文描述: 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8位閃速存儲(chǔ)器)
中文描述: 1,600(2米× 8)位快閃記憶體(單5V的電源電壓200萬× 8位閃速存儲(chǔ)器)
文件頁數(shù): 12/18頁
文件大?。?/td> 216K
代理商: MBM29F016
12
MBM29F016
-12-X
I
AC CHARACTERISTICS
Read Only Operations Characteristics
Note: Test Conditions: Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 0.45 V and 2.4 V
Output: 0.8 V and 2.0 V
Parameter
Symbols
Description
Test Setup
–12–X
(Note)
Unit
JEDEC
Standard
t
AVAV
t
RC
Read Cycle Time
Min.
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max.
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max.
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max.
50
ns
t
EHQZ
t
DF
Chip Enable to Output High-Z
Max.
30
ns
t
GHQZ
t
DF
Output Enable to Output High-Z
Max.
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE or OE,
Whichever Occurs First
Min.
0
ns
t
READY
RESET Pin Low to Read Mode
Max.
20
μ
s
Figure 4 Test Conditions
Note: C
L
= 100 pF including jig capacitance
C
L
5.0 V
Diodes = IN3064
or Equivalent
2.7 k
Device
Under
Test
IN3064
or Equivalent
6.2 k
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