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參數(shù)資料
| 型號： | MBM29F016 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 16M (2M ×8) Bit Flash Memory( 單5V 電源電壓2M ×8位閃速存儲器) |
| 中文描述： | 1,600（2米× 8）位快閃記憶體（單5V的電源電壓200萬× 8位閃速存儲器） |
| 文件頁數(shù)： | 3/18頁 |
| 文件大小： | 216K |
| 代理商： | MBM29F016 |
3
MBM29F016
-12-X
I
GENERAL DESCRIPTION
The MBM29F016-X is a 8M-bit, 5.0 V-Only Flash memory organized as 2 M bytes of 8 bits each. The 2 M bytes
of data is divided into 32 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ
to DQ
7
. The MBM29F016-X is offered in a 48-pin TSOP package. This device is designed to be programmed
in-system with the standard system 5.0 V V
CC
supply. A 12.0 V V
The device can also be reprogrammed in standard EPROM programmers.
0
PP
is not required for program or erase operations.
The MBM29F016-X offers access time 120 ns allowing operation of high-speed microprocessors without wait
states. To eliminate bus contention the device has swparate chip enable (CE), write enable (WE), and output
enable (OE) controls.
The MBM29F016-X is command set compatible with JEDEC standard single-supply Flash standard. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0 V Flash or EPROM devices.
The MBM29F016-X is programmed by executing the program command sequence. This will invoke the Embed-
ded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and
verifies proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase is
accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm
which is an internal algorithm that automatically preprograms the array if it is not already programmed before
executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies
proper cell margin.
This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to
be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within one
second (if already completely preprogrammed). The MBM29F016-X is erased when shipped from the factory.
The MBM29F016-X device also features hardware sector group protection. This feature will disable both program
and erase operations in any combination of eight sector groups of memory. A sector group consists of four
adjacent sectors grouped in the following pattern: sectors 0-3, 4-7, 8-11, 12-15, 16-19, 20-23, 24-27, and 28-31.
Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of
time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.
The device features single 5.0 V power supply operation for both read and program functions. Internally gener-
ated and regulated voltages are provided for the program and erase operations. A low V
inhibits write operations during power transitions. The end of program or erase is detected by the RY/BY output
pin, Data Polling of DQ
7
, or by the Toggle Bit I feature on DQ
been completed, the device automatically resets to the read mode.
CC
detector automatically
6
. Once the end of a program or erase cycle has
The MBM29F016-X also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into
the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs
during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read
mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu's Flash technology combines years of EPROM and E
of quality, reliability, and cost effectiveness. The MBM29F016-X memory electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the
EPROM programming mechanism of hot electron injection.
2
PROM experience to produce the highest levels
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