參數(shù)資料
型號: MBM29F200TC-90PF
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: Replaced by TPS2043B : 0.7A, 2.7-5.5V Triple (2In/3Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 16-SOIC -40 to 85
中文描述: 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
封裝: PLASTIC, SOP-44
文件頁數(shù): 30/48頁
文件大小: 508K
代理商: MBM29F200TC-90PF
30
MBM29F200TC
-55/-70/-90
/MBM29F200BC
-55/-70/-90
Notes:
1. PA is address of the memory location to be programmed
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the
×
16 mode.
Figure 6 Alternate WE Controlled Program Operation Timings
t
GHWL
t
WP
t
DS
t
WHWH1
t
WC
t
AH
CE
OE
t
RC
Addresses
Data
t
AS
t
OE
t
WPH
t
CS
t
DH
DQ
7
PD
A0H
D
OUT
t
CE
WE
555H
PA
PA
t
OH
Data Polling
3rd Bus Cycle
t
CH
D
OUT
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