參數(shù)資料
型號: MBM29F400TA
廠商: Fujitsu Limited
英文描述: 4M (512K×8/256K ×16) Bit Flash Memory(4M 單5V 電源電壓512K×8/256K ×16位閃速存儲器)
中文描述: 4分(為512k × 8/256K × 16)位閃存(4分單5V的電源電壓為512k × 8/256K × 16位閃速存儲器)
文件頁數(shù): 25/47頁
文件大小: 424K
代理商: MBM29F400TA
25
MBM29F400TA/MBM29F400BA
I
AC CHARACTERISTICS
Read Only Operations Characteristics
Notes:
1. Test Conditions: Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
2. Test Conditions: Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level
.Input: 0.8 V and 2.0 V
Output: 0.8 V and 2.0 V
Parameter
Symbol
Description
Test Setup
–70
(Note 1)
–90
(Note 2)
–12
(Note 2)
Unit
JEDEC
Standard
t
AVAV
t
RC
Read Cycle Time
Min.
70
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max.
70
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max.
70
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max.
30
35
50
ns
t
EHQZ
t
DF
Chip Enable to Output High-Z
Max.
20
20
30
ns
t
GHQZ
t
DF
Output Enable to Output High-Z
Max.
20
20
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
Min.
0
0
0
ns
t
READY
RESET Pin Low to Read Mode
Max.
20
20
20
μ
s
t
ELFL
t
ELFH
CE or BYTE Switching Low or High
Max.
5
5
5
ns
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