參數(shù)資料
型號: MBM29F400TA
廠商: Fujitsu Limited
英文描述: 4M (512K×8/256K ×16) Bit Flash Memory(4M 單5V 電源電壓512K×8/256K ×16位閃速存儲器)
中文描述: 4分(為512k × 8/256K × 16)位閃存(4分單5V的電源電壓為512k × 8/256K × 16位閃速存儲器)
文件頁數(shù): 27/47頁
文件大?。?/td> 424K
代理商: MBM29F400TA
27
MBM29F400TA/MBM29F400BA
(Continued)
Notes:
1. This does not include the preprogramming time.
2. These timings are for Sector Protection operation.
3. Not 100% tested.
4. Output Driver Disable Time.
Parameter Symbol
Description
–70
–90
–12
Unit
JEDEC
Standard
t
GHWL
t
GHWL
Read Recover Time Before Write
Min.
0
0
0
ns
t
ELWL
t
CS
CE Setup Time
Min.
0
0
0
ns
t
WHEH
t
CH
CE Hold Time
Min.
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min.
35
45
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min.
20
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ.
16
16
16
μ
s
t
WHWH2
t
WHWH2
Erase Operation (Note 1)
Typ.
1.5
1.5
1.5
sec
Max.
30
30
30
sec
t
VCS
V
CC
Setup Time (Note 3)
Min.
50
50
50
μ
s
t
VLHT
Voltage Transition Time (Notes 2, 3)
Min.
4
4
4
μ
s
t
WPP
Write Pulse Width (Note 2)
Min.
100
100
100
μ
s
t
OESP
OE Setup Time to WE Active (Notes 2, 3)
Min.
4
4
4
μ
s
t
CSP
CE Setup Time to WE Active (Note 3)
Min.
4
4
4
μ
s
t
RP
RESET Pulse Width
Min.
500
500
500
ns
t
FLQZ
BYTE Switching Low to Output High-Z (Notes 3, 4) Max.
20
30
30
ns
t
BUSY
Program/Erase Valid to RY/BY Delay (Note 3)
Min.
30
35
50
ns
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