參數資料
型號: MBM29F800T-12
廠商: Fujitsu Limited
英文描述: 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
中文描述: 8米(1米× 8/512K × 6)位Falsh內存(單5V的電源電壓100萬× 8/512K × 6位閃速存儲器)
文件頁數: 14/51頁
文件大?。?/td> 642K
代理商: MBM29F800T-12
14
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
Table 6 Sector Address Tables (MBM29F800B)
Sector
Address
A
18
A
17
A
16
A
15
A
14
A
13
A
12
Address Range
SA0
0
0
0
0
0
0
X
00000H to 03FFFH
SA1
0
0
0
0
0
1
0
04000H to 05FFFH
SA2
0
0
0
0
0
1
1
06000H to 07FFFH
SA3
0
0
0
0
1
X
X
08000H to 0FFFFH
SA4
0
0
0
1
X
X
X
10000H to 1FFFFH
SA5
0
0
1
0
X
X
X
20000H to 2FFFFH
SA6
0
0
1
1
X
X
X
30000H to 3FFFFH
SA7
0
1
0
0
X
X
X
40000H to 4FFFFH
SA8
0
1
0
1
X
X
X
50000H to 5FFFFH
SA9
0
1
1
0
X
X
X
60000H to 6FFFFH
SA10
0
1
1
1
X
X
X
70000H to 7FFFFH
SA11
1
0
0
0
X
X
X
80000H to 8FFFFH
SA12
1
0
0
1
X
X
X
90000H to 9FFFFH
SA13
1
0
1
0
X
X
X
A0000H to AFFFFH
SA14
1
0
1
1
X
X
X
B0000H to BFFFFH
SA15
1
1
0
0
X
X
X
C0000H to CFFFFH
SA16
1
1
0
1
X
X
X
D0000H to DFFFFH
SA17
1
1
1
0
X
X
X
E0000H to EFFFFH
SA18
1
1
1
1
X
X
X
F0000H to FFFFFH
相關PDF資料
PDF描述
MBM29F800T-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800B-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器)
MBM29F800TA Replaced by TPS2045A : 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
相關代理商/技術參數
參數描述
MBM29F800TA 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800TA-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800TA-55PF 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY
MBM29F800TA-55PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY
MBM29F800TA-55PFTN-S# 制造商:FUJITSU 功能描述: