參數(shù)資料
型號(hào)： MBM29F800T-12
廠(chǎng)商： Fujitsu Limited
英文描述： 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
中文描述： 8米（1米× 8/512K × 6）位Falsh內(nèi)存（單5V的電源電壓100萬(wàn)× 8/512K × 6位閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 3/51頁(yè)
文件大?。?/td> 642K
代理商： MBM29F800T-12
3
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
I
GENERAL DESCRIPTION
The MBM29F800T/B is a 8M-bit, 5.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words
of 16 bits each. The MBM29F800T/B is offered in a 48-pin TSOP and 44-pin SOP packages. This device is
designed to be programmed in-system with the standard system 5.0 V V
write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
The standard MBM29LV800T/B offers access times 90 ns and 120 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
CC
supply. 12.0 V V
PP
is not required for
The MBM29F800T/B is pin and command set compatible with JEDEC standard. Commands are written to the
command register using standard microprocessor write timings. Register contents serve as input to an internal
state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses
and data needed for the programming and erase operations. Reading data out of the devices is similar to reading
from12.0 V Flash or EPROM devices.
The MBM29F800T/B is programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the device automatically times the erase pulse widths and
verifies proper cell margin.
A sector is typically erased and verified in 1.0 second (if already completely preprogrammed.).
The devices also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29F800T/B is erased when shipped from the factory.
The devices features single 5.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
completed, the device internally resets to the read mode.
CC
detector automatically
7
,
Fujitsu’s Flash technology combines years of EPROM and E
of quality, reliability, and cost effectiveness. The MBM29F800T/B memory electrically erase the entire chip or all
bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/
word at a time using the EPROM programming mechanism of hot electron injection.
2
PROM experience to produce the highest levels
相關(guān)PDF資料
PDF描述
MBM29F800T-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
MBM29F800B-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
MBM29F800TA Replaced by TPS2045A : 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F800TA 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800TA-55 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800TA-55PF 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY
MBM29F800TA-55PFTN 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY
MBM29F800TA-55PFTN-S# 制造商:FUJITSU 功能描述:
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