參數(shù)資料
型號(hào)： MBM29F800T-90
廠(chǎng)商： Fujitsu Limited
英文描述： 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
中文描述： 8米（1米× 8/512K × 6）位Falsh內(nèi)存（單5V的電源電壓100萬(wàn)× 8/512K × 6位閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 19/51頁(yè)
文件大?。?/td> 642K
代理商： MBM29F800T-90
19
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
DQ
7
Data Polling
The MBM29F800T/B device feature Data Polling as a method to indicate to the host that the Embedded
Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the device
will produce the complement of the data last written to DQ
7
. Upon completion of the Embedded Program
Algorithm, an attempt to read the device will produce the true data last written to DQ
7
. During the Embedded
Erase Algorithm, an attempt to read the device will produce a “0” at the DQ
7
output. Upon completion of the
Embedded Erase Algorithm an attempt to read the device will produce a “1” at the DQ
7
output. The flowchart
for Data Polling (DQ
7
) is shown in Figure 20.
For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six
write pulse sequence. Data Polling must be performed at sector address within any of the sectors being erased
and not a protected sector. Otherwise, the status may not be valid. Once the Embedded Algorithm operation is
close to being completed, the MBM29F800T/B data pins (DQ
7
) may change asynchronously while the output
enable (OE) is asserted low. This means that the device is driving status information on DQ
7
at one instant of
time and then that byte’s valid data at the next instant of time. Depending on when the system samples the DQ
7
output, it may read the status or valid data. Even if the device has completed the Embedded Algorithm operation
and DQ
7
has a valid data, the data outputs on DQ
0
to DQ
6
may be still invalid. The valid data on DQ
0
to DQ
7
will
be read on the successive read attempts.
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm
or sector erase time-out (See Table 8).
See Figure 9 for the Data Polling timing specifications and diagrams.
DQ
6
Toggle Bit I
The MBM29F800T/B also feature the “Toggle Bit I” as a method to indicate to the host system that the Embedded
Algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from
the device will result in DQ
6
toggling between one and zero. Once the Embedded Program or Erase Algorithm
cycle is completed, DQ
6
will stop toggling and valid data will be read on the next successive attempts. During
programming, the Toggle Bit I is valid after the rising edge of the fourth WE pulse in the four write pulse sequence.
For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth WE pulse in the six
write pulse sequence. The Toggle Bit I is active during the sector time out.
In programming, if the sector being written to is protected, the toggle bit l will toggle for about 2
μ
s and then stop
toggling without the data having changed. In erase, the device will erase all the selected sectors except for the
ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 100
μ
s
and then drop back into read mode, having changed none of the data.
Either CE or OE toggling will cause the DQ
6
to toggle. In addition, an Erase Suspend/Resume command will
cause DQ
6
to toggle.
See Figure 10 for the Toggle Bit I timing specifications and diagrams.
DQ
5
Exceeded Timing Limits
DQ
5
will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under
these conditions DQ
5
will produce a “1”. This is a failure condition which indicates that the program or erase
cycle was not successfully completed. Data Polling is the only operating function of the devices under this
condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA).
The OE and WE pins will control the output disable functions as described in Tables 2 and 3.
相關(guān)PDF資料
PDF描述
MBM29F800B-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
MBM29F800TA Replaced by TPS2045A : 0.345A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
MBM29F800BA-70 Multi-Color LED; Bulb Size:T-1; LED Color:Red/Green; Luminous Intensity:14ucd; Viewing Angle:60 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-25 C to +75 C; Color:Red/Green RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F800TA 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800TA-55 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800TA-55PF 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY
MBM29F800TA-55PFTN 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY
MBM29F800TA-55PFTN-S# 制造商:FUJITSU 功能描述:
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