參數(shù)資料
型號: MBM29F800T-90
廠商: Fujitsu Limited
英文描述: 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
中文描述: 8米(1米× 8/512K × 6)位Falsh內(nèi)存(單5V的電源電壓100萬× 8/512K × 6位閃速存儲器)
文件頁數(shù): 40/51頁
文件大?。?/td> 642K
代理商: MBM29F800T-90
40
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
* Device is either powered-down, erase inhibit or program inhibit.
Table 10 Embedded Erase Algorithm
Bus Operations
Command Sequence
Comments
Standby*
Write
Erase
Read
Data Polling to Verify Erasure
Standby*
Compare Output to FFH
Figure 19 Embedded Erase Algorithm
EMBEDDED ALGORITHMS
* :The sequence is applied for
×
16 mode.
The addresses differ from
×
8 mode.
Start
5555H/AAH
2AAAH/55H
5555H/AAH
5555H/80H
5555H/10H
2AAAH/55H
5555H/AAH
2AAAH/55H
5555H/AAH
5555H/80H
2AAAH/55H
Additional sector
erase commands
are optional.
Write Erase Command
Sequece
(See Below)
Data Polling or Toggle Bit
Successfully Completed
Erasure Completed
Chip Erase Command Sequence*
(Address/Command):
Individual Sector/Multiple Sector*
Erase Command Sequence
(Address/Command):
Sector Address/30H
Sector Address/30H
Sector Address/30H
相關(guān)PDF資料
PDF描述
MBM29F800B-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲器)
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲器)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F800TA 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800TA-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29F800TA-55PF 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY
MBM29F800TA-55PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY
MBM29F800TA-55PFTN-S# 制造商:FUJITSU 功能描述: