參數(shù)資料
型號(hào): MBM29F800T-90
廠商: Fujitsu Limited
英文描述: 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
中文描述: 8米(1米× 8/512K × 6)位Falsh內(nèi)存(單5V的電源電壓100萬(wàn)× 8/512K × 6位閃速存儲(chǔ)器)
文件頁(yè)數(shù): 27/51頁(yè)
文件大?。?/td> 642K
代理商: MBM29F800T-90
27
MBM29F800T
-90/-12
/MBM29F800B
-90/-12
I
AC CHARACTERISTICS
Read Only Operations Characteristics
Note:
Test Conditions: Output Load:
1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level
Input: 0.8 V and 2.0V
Output: 0.8 V and 2.0V
Parameter
Symbols
Description
Test Setup
-90
(Note)
-12
(Note)
Unit
JEDEC
Standard
t
AVAV
t
RC
Read Cycle Time
Min.
90
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max.
90
120
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max.
90
120
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max.
40
50
ns
t
EHQZ
t
DF
Chip Enable to Output High-Z
Max.
20
30
ns
t
GHQZ
t
DF
Output Enable to Output High-Z
Max.
20
30
ns
t
AXQX
t
OH
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
Min.
0
0
ns
t
READY
RESET Pin Low to Read Mode
Max.
20
20
μ
s
t
ELFL
t
ELFH
CE or BYTE Switching Low or High
Max.
5
5
ns
Figure 4 Test Conditions
C
L
5.0 V
Diodes = IN3064
or Equivalent
2.7 k
Device
Under
Test
IN3064
or Equivalent
6.2 k
Note:
C
L
= 100 pF including jig capacitance
相關(guān)PDF資料
PDF描述
MBM29F800B-90 8M (1M ×8/512K ×6) Bit Falsh Memory(單5V 電源電壓1M ×8/512K ×6位閃速存儲(chǔ)器)
MBM29F800B 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
MBM29F800T 8 M (1 M×8/512 K×16) BIT Flash Memory(8 M (1 M×8/512 K×16) 位單5V 電源電壓閃速存儲(chǔ)器)
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