參數(shù)資料
型號: MBM29LV080-12
廠商: Fujitsu Limited
英文描述: 8M (1M ×8) Bit Flash Memory(8M (1M ×8)位 單5V 電源電壓閃速存儲器)
中文描述: 8米(1米× 8)位閃存(8米(1米× 8)位單5V的電源電壓閃速存儲器)
文件頁數(shù): 24/44頁
文件大?。?/td> 420K
代理商: MBM29LV080-12
24
MBM29LV080
-10/-12/-15
Write/Erase/Program Operations
Alternate WE Controlled Writes
Notes: 1. This does not include the preprogramming time.
2. This timing is for Sector Protection operation.
Parameter symbols
Description
–10
–12
–15
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time
Min.
100
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min.
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min.
50
50
65
ns
t
DVWH
t
DS
Data Setup Time
Min.
50
50
65
ns
t
WHDX
t
DH
Data Hold Time
Min.
0
0
0
ns
t
OES
Output Enable Setup Time
Min.
0
0
0
ns
t
OEH
Output
Enable Hold
Time
Read
Min.
0
0
0
ns
Toggle and Data Polling
Min.
10
10
10
ns
t
GHWL
t
GHWL
READ RECOVER TIME BEFORE WRITE
Min.
0
0
0
ns
t
ELWL
t
CS
CE Setup Time
Min.
0
0
0
ns
t
WHEH
t
CH
CE Hold TIme
Min.
0
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min.
50
50
65
ns
t
WHWL
t
WPH
Write Pulse Width High
Min.
30
30
35
ns
μ
s
sec
μ
s
μ
s
μ
s
μ
s
μ
s
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ.
11
11
11
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
Typ.
1
1
1
t
VCS
V
cc
Setup Time
Min.
50
50
50
t
VLHT
Voltage Transition Time (Note 2)
Min.
4
4
4
t
WPP
Write Pulse Width
Min.
100
100
100
t
OESP
OE Setup Time to WE Active (Note 2)
Min.
4
4
4
t
CSP
CE Setup Time to WE Active (Note 2)
Min.
4
4
4
t
RB
Recover Time from RY/BY
Min.
0
0
0
t
RP
RESET Pulse Width
Min.
500
500
500
ns
t
RH
RESET Hold Time before Read
Min.
500
500
500
ns
t
BUSY
Program/erase Valid to RY/BY Delay
Min.
90
90
90
ns
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