參數(shù)資料
型號: MBM29LV200B-10
廠商: Fujitsu Limited
英文描述: CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲器)
中文描述: 200萬的CMOS(256K × 8/128K × 16)位閃存(200萬(256K × 8/128K × 16)位單5V的電源電壓閃速存儲器)
文件頁數(shù): 43/50頁
文件大?。?/td> 469K
代理商: MBM29LV200B-10
43
MBM29LV200T
-10/-12
/MBM29LV200B
-10/-12
Fail
DQ
6
= Toggle
Yes
No
DQ
6
= Toggle
DQ
5
= 1
Pass
Yes
No
No
Yes
Read Byte
(DQ
0
to DQ
7
)
Addr. = VA
Read Byte
(DQ
0
to DQ
7
)
Addr. = VA
Start
Figure 21 Toggle Bit Algorithm
Note:
DQ
6
is rechecked even if DQ
5
= “1” because DQ
6
may stop toggling at the same time as
DQ
5
changing to “1”.
VA = Byte address for programming
= Any of the sector addresses
within the sector being erased
during sector erase or multiple
sector erases operation.
= XXXXH during sector erase or
multiple sector erases operation.
= Any of the sector addresses
within the sector not being
protected during sector erase or
multiple sector erases operation.
相關(guān)PDF資料
PDF描述
MBM29LV200T-10 CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲器)
MBM29LV200T-12 CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲器)
MBM29LV200B-12 CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲器)
MBM29LV200B 2 M (256 K ×8/128 K ×16)Flash Memory((256 K ×8/128 K ×16) 單3V 電源電壓閃速存儲器)
MBM29LV200T 2 M (256 K ×8/128 K ×16)Flash Memory((256 K ×8/128 K ×16) 單3V 電源電壓閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV200BC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
MBM29LV200BC-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
MBM29LV200BC-12PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
MBM29LV200BC-12PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT
MBM29LV200BC-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT