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參數(shù)資料
| 型號： | MBM29LV200B-12 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲器) |
| 中文描述： | 200萬的CMOS（256K × 8/128K × 16）位閃存（200萬（256K × 8/128K × 16）位單5V的電源電壓閃速存儲器） |
| 文件頁數(shù)： | 1/50頁 |
| 文件大?。?/td> | 469K |
| 代理商： | MBM29LV200B-12 |
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DS05-20829-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
2M (256K
×
8/128K
×
16) BIT
MBM29LV200T
-10/-12
/MBM29LV200B
-10/-12
I
FEATURES
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
Minimum 100,000 program/erase cycles
High performance
100 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low Vcc write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Sector protection
Hardware method disables any combination of sectors from program or erase operations
Temporary sector unprotection
Hardware method enables temporarily any combination of sectors from program or erase operations.
2
PROMs
TM
TM
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29LV200B | 2 M (256 K ×8/128 K ×16)Flash Memory((256 K ×8/128 K ×16) 單3V 電源電壓閃速存儲器) |
| MBM29LV200T | 2 M (256 K ×8/128 K ×16)Flash Memory((256 K ×8/128 K ×16) 單3V 電源電壓閃速存儲器) |
| MBM29LV320BE | Triacs - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 800 V |
| MBM29LV320BE10TR | 32 M (4 M X 8/2 M X 16) BIT |
| MBM29LV320TE90 | 32 M (4 M X 8/2 M X 16) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV200BC | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT |
| MBM29LV200BC-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT |
| MBM29LV200BC-12PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT |
| MBM29LV200BC-12PFTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT |
| MBM29LV200BC-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT |
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