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參數(shù)資料
| 型號： | MBM29LV400T-12 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器) |
| 中文描述： | 的CMOS 4分（為512k × 8/256K × 16）Falsh存儲器（為512k × 8/256K × 16位單5V的電源電壓閃速存儲器） |
| 文件頁數(shù)： | 1/51頁 |
| 文件大小： | 498K |
| 代理商： | MBM29LV400T-12 |
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DS05-20826-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
4M (512K
×
8/256K
×
16) BIT
MBM29LV400T
-10/-12
/MBM29LV400B
-10/-12
I
FEATURES
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
46-pin SON (Package suffix: PN)
Minimum 100,000 write/erase cycles
High performance
100 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready-Busy output (RY/BY)
Hardware method for detector of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Sector protection
Hardware method disables any combination of sectors from program or erase operations
Temporary sector unprotection
Hardware method enables temporarily any combination of sectors from program or erase operations.
2
PROMs
TM
TM
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29LV400B-10 | CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器) |
| MBM29LV400B | CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器) |
| MBM29LV400T | CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器) |
| MBM29LV400TC-90 | 4M (512K X 8/256K X 16) BIT |
| MBM29LV400TC-90PBT | 4M (512K X 8/256K X 16) BIT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV400TC | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT |
| MBM29LV400TC-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT |
| MBM29LV400TC-12PBT | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT |
| MBM29LV400TC-12PCV | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT |
| MBM29LV400TC-12PF | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT |
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