參數(shù)資料
型號(hào): MBM29LV400T-12
廠商: Fujitsu Limited
英文描述: CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述: 的CMOS 4分(為512k × 8/256K × 16)Falsh存儲(chǔ)器(為512k × 8/256K × 16位單5V的電源電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 44/51頁(yè)
文件大?。?/td> 498K
代理商: MBM29LV400T-12
44
MBM29LV400T
-10/-12
/MBM29LV400B
-10/-12
Setup Sector Addr.
(A
17
, A
16
, A
15
, A
14
, A
13
, A
12
)
Activate WE Pulse
WE
=
V
IH
, CE
=
OE
=
V
IL
A
9
should remain V
ID
Yes
Yes
No
No
OE
=
V
ID
, A
9
=
V
ID
,
A
6
=
CE
=
V
IL
, RESET
=
V
IH
PLSCNT = 1
Time out 100
μ
s
Read from Sector
(Addr. = SA, A
1
= 1, A
0
= A
6
= 0)*
Remove V
ID
from A
9
Write Reset Command
Increment PLSCNT
No
Yes
Protect Another Sector
Start
Sector Protection
Completed
Data = 01H
PLSCNT = 25
Device Failed
Remove V
ID
from A
9
Write Reset Command
Figure 22 Sector Protection Algorithm
* :A
-1
is V
IL
on byte mode.
相關(guān)PDF資料
PDF描述
MBM29LV400B-10 CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV400B CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV400T CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV400TC-90 4M (512K X 8/256K X 16) BIT
MBM29LV400TC-90PBT 4M (512K X 8/256K X 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV400TC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PCV 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT