參數(shù)資料
型號(hào)： MBM29LV400T-12
廠商： Fujitsu Limited
英文描述： CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述： 的CMOS 4分（為512k × 8/256K × 16）Falsh存儲(chǔ)器（為512k × 8/256K × 16位單5V的電源電壓閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 21/51頁(yè)
文件大?。?/td> 498K
代理商： MBM29LV400T-12
21
MBM29LV400T
-10/-12
/MBM29LV400B
-10/-12
DQ
5
Exceeded Timing Limits
DQ
5
will indicate if the program or erase time has exceeded the specified limits. (Internal pulse count.) Under
these conditions DQ
5
will produce a “1”. This is a failure condition which indicates that the program or erase
cycle was not successfully completed. Data Polling is the only operating function of the devices under this
condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA).
The OE and WE pins will control the output disable functions as described in Tables 2 and 3.
If this failure condition occurs during sector erase operation, it specifies that a particular sector is bad and it may
not be reused. However, other sectors are still functional and may be used for the program or erase operation.
The device must be reset to use other sectors. Write the Reset command sequence to the device, and then
execute program or erase command sequence. This allows the system to continue to use the other active sectors
in the device.
If this failure condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination
of sectors are bad.
If this failure condition occurs during the byte programming operation, it specifies that the entire sector containing
that byte is bad and this sector may not be reused, (other sectors are still functional and can be reused).
The DQ
5
failure condition may also appear if a user tries to program a non blank location without erasing. In this
case the devices lock out and never complete the Embedded Algorithm operation. Hence, the system never
reads a valid data on DQ
7
bit and DQ
6
never stops toggling. Once the devices have exceeded timing limits, the
DQ
5
bit will indicate a “1.” Please note that this is not a device failure condition since the devices were incorrectly
used.
DQ
3
Sector Erase Timer
After the completion of the initial Sector Erase command sequence the sector erase time-out will begin. DQ
3
will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial Sector Erase
command sequence.
If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command, DQ
3
may
be used to determine if the sector erase timer window is still open. If DQ
3
is high (“1”) the internally controlled
erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or Toggle Bit I. If DQ
3
is low (“0”), the device will accept
additional Sector Erase commands. To insure the command has been accepted, the system software should
check the status of DQ
3
prior to and following each subsequent sector erase command. If DQ
3
were high on the
second status check, the command may not have been accepted.
See Table 8: Hardware Sequence Flags.
DQ
2
Toggle Bit II
This toggle bit II, along with DQ
6
, can be used to determine whether the devices are in the Embedded Erase
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ
2
to toggle during the Embedded Erase Algorithm. If the
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ
2
to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte
address of the non-erase suspended sector will indicate a logic “1” at the DQ
2
bit.
相關(guān)PDF資料
PDF描述
MBM29LV400B-10 CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV400B CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV400T CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV400TC-90 4M (512K X 8/256K X 16) BIT
MBM29LV400TC-90PBT 4M (512K X 8/256K X 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV400TC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PCV 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
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