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| 型號(hào)： | MBM29LV652UE90PBT |
| 廠商： | FUJITSU LTD |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M (4M X 16) BIT |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PBGA63 |
| 封裝： | PLASTIC, FBGA-63 |
| 文件頁(yè)數(shù)： | 32/58頁(yè) |
| 文件大?。?/td> | 571K |
| 代理商： | MBM29LV652UE90PBT |
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MBM29LV652UE-
90/12
32
I
ELECTRICAL CHARACTERISTICS
1.
DC Characteristics
Notes: 1. The l
CC
current listed includes both the DC operating current and the frequency dependent component.
2. l
CC
active while Embedded Erase or Embedded Program is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only V
CC
applying.
Parameter
Symbol
Parameter Description
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max.
–1.0
+1.0
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max.
–1.0
+1.0
μA
I
LIT
A
9
, OE, RESET Inputs Leakage
Current
V
CC
= V
CC
Max.,
A
9
, OE, RESET = 12.5 V
—
35
μA
I
ACC
ACC Accelerated Program Current
V
CC
= V
CC
Max.,
ACC = V
ACC
Max.
—
20
mA
I
CC1
V
CC
Active Current (Note 1)
CE = V
IL
, OE = V
IH
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max., f = 5 MHz
—
16
mA
CE = V
IL
, OE = V
IH
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max., f = 1 MHz
—
7
mA
I
CC2
V
CC
Active Current (Note 2)
CE = V
IL
, OE = V
IH
, V
CC
= V
CC
Max.,
V
CC
q = V
CC
q Max.
—
40
mA
I
CC3
V
CC
Current (Standby)
V
CC
= V
CC
Max., V
CC
q = V
CC
q Max.,
CE = V
CC
±
0.3 V,
RESET = V
CC
±
0.3 V
—
5
μA
I
CC4
V
CC
Current (Standby, RESET)
V
CC
= V
CC
Max., V
CC
q = V
CC
q Max.,
RESET = V
SS
±
0.3 V
—
5
μA
I
CC5
V
CC
Current
(Automatic Sleep Mode) (Note 3)
V
CC
= V
CC
Max., V
CC
q = V
CC
q Max.,
CE = V
SS
±
0.3 V,
RESET = V
CC
±
0.3 V,
V
IN
= V
CC
±
0.3 V or V
SS
±
0.3 V
—
5
μA
V
IL
Input Low Level
—
–0.5
0.6
V
V
IH
Input High Level
—
2.0
V
CC
+ 0.5
V
V
ACC
Voltage for Program Acceleration
—
11.5
12.5
V
V
ID
Voltage for Autoselect, Sector
Protection (A
9
, OE, RESET) (Note 4)
—
11.5
12.5
V
V
OL
Output Low Voltage Level
I
OL
= 4.0 mA, V
CC
= V
CC
Min.,
V
CC
q = V
CC
q Min.
—
0.45
V
V
OH1
Output High Voltage Level
I
OH
= –2.0 mA, V
CC
= V
CC
Min.,
V
CC
q = V
CC
q Min.
2.4
—
V
V
OH2
I
OH
= –100 μA, V
CC
Min.,
V
CC
q = V
CC
q Min.
V
CC
q
–
0.4
—
V
V
LKO
Low V
CC
Lock-Out Voltage
—
2.3
2.5
V
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