參數(shù)資料
型號: MBM29LV652UE90PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64M (4M X 16) BIT
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝: PLASTIC, FBGA-63
文件頁數(shù): 39/58頁
文件大?。?/td> 571K
代理商: MBM29LV652UE90PBT
MBM29LV652UE-
90/12
39
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
Figure 6 Alternate WE Controlled Program Operation Timing Diagram
t
CH
t
WP
t
WHWH1
t
WC
t
AH
CE
OE
t
RC
Addresses
Data
t
AS
t
OE
t
WPH
t
GHWL
t
DH
DQ
7
PD
A0h
D
OUT
WE
XXXh
PA
PA
t
OH
Data Polling
3rd Bus Cycle
t
CS
t
CE
t
DS
D
OUT
t
DF
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