參數(shù)資料
型號(hào)： MBM29LV652UE90PBT
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 64M (4M X 16) BIT
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝： PLASTIC, FBGA-63
文件頁(yè)數(shù)： 8/58頁(yè)
文件大?。?/td> 571K
代理商： MBM29LV652UE90PBT
MBM29LV652UE-
90/12
8
I
DEVICE BUS OPERATION
Legend:
L = V
IL
, H = V
IH
, X = V
IL
or V
IH
.
= Pulse input. See DC Characteristics for voltage levels.
*1:Manufacturer and device codes may also be accessed via a command register write sequence. See Table 3.
*2:Refer to the section on Sector Group Protection.
*3:WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
*4:V
CC
= 3.3 V ±10%
*5:It is also used for the extended sector group protection.
Table2 MBM29LV652UE User Bus Operations
Operation
CE
OE
WE
A
0
A
1
A
6
A
9
DQ
0
to DQ
15
RESET
Auto-Select Manufacture Code *
1
L
L
H
L
L
L
V
ID
Code
H
Auto-Select Device Code *
1
L
L
H
H
L
L
V
ID
Code
H
Read *
3
L
L
H
A
0
A
1
A
6
A
9
D
OUT
H
Standby
H
X
X
X
X
X
X
HIGH-Z
H
Output Disable
L
H
H
X
X
X
X
HIGH-Z
H
Write (Program/Erase)
L
H
L
A
0
A
1
A
6
A
9
D
IN
H
Enable Sector Group Protection *
2
*
4
L
V
ID
L
H
L
V
ID
X
H
Verify Sector Group Protection *
2
*
4
L
L
H
L
H
L
V
ID
Code
H
Temporary Sector Group Unprotection *
5
X
X
X
X
X
X
X
X
V
ID
Reset (Hardware)/Standby
X
X
X
X
X
X
X
HIGH-Z
L
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