參數(shù)資料
型號(hào)： MC33394
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
元件分類： CAN
英文描述： Switch Mode Power Supply with Multiple Linear Regulators and High Speed CAN Transceiver(帶有多個(gè)線性穩(wěn)壓器和高速CAN收發(fā)器的開關(guān)方式電源)
中文描述： 開關(guān)電源的多線性穩(wěn)壓器和高速CAN收發(fā)器（帶有多個(gè)線性穩(wěn)壓器和高速的CAN收發(fā)器的開關(guān)方式電源）
文件頁(yè)數(shù)： 18/44頁(yè)
文件大?。?/td> 641K
代理商： MC33394
18
Go to: www.freescale.com
battery (+18 V) and short to –2.0 V. Precautions must be taken
to protect the VREF pins from exposure to transients. See
Table 1 for recommended output capacitor parameters.
4.5.1. VREF Over Temperature Latch Off Feature
If either the VREF1, VREF2 or VREF3 outputs is shorted to
ground for any duration of time, an over temperature shut
down circuit disables the output source transistor once the
local die temperature exceeds +150
°
C to +190
°
C. The output
transistor remains off until the locally sensed temperature is
5
°
C to 20
°
C. below the trip off temperature. The output(s) will
periodically turn on and off until either the die temperature
decreases or until the fault condition is removed. If one of
these outputs goes into over—temperature shutdown, it will
not impact the operation of any of the other outputs (assuming
that no other package thermal or VPRE current limit
specifications are violated). Fault information is reported
through the SPI communication interface (see Figure 8).
4.6. Voltage Regulator (VDD3_3)
This linearly regulated +3.3 V +/–0.06 V voltage supply is
capable of sourcing 120 mA of steady state current from
VPRE (+5.6 V) for VBAT voltage from +4.0 V to +26.5 V (+45V
transient). This regulator incorporates current limit short
circuit protection and thermal protection. When no external
pass transistor is used the VDD3_3 and the VDD3_3FB pins
must be shorted together — see Figure 22. The current
capability of the VDD3_3 output can be increased by means
of an external pass transistor — see Figure 1. When the
external pass transistor is used the VDD3_3 internal short
circuit current limit does not provide the short circuit
protection. The voltage output is stable under all load/line
conditions. However, the designer must consider ripple and
high frequency filtering as well as regulator response when
choosing external components. See Table 1 in the
Applications Information section for recommended output
capacitor parameters.
NOTE :
Backfeeding into the VDD3_3 output can cause problems
during the power up sequence. Refer to the Electrical
Characteristics VDD3_3 Regulator Section for the maximum
allowed backfed current into the VDD3_3 output.
4.7. Voltage Regulator (VDDL)
The output voltage of the VDDL linear regulator is
adjustable by means of an external resistor divider.
This linearly regulated +/–2% core voltage supply uses an
external pass transistor and is capable of sourcing 40 mA
base drive current typically (see application circuit, Figure 1)
of steady state current. The collector of the external NPN pass
transistor is connected to VPRE (+5.6 V) for a VBAT voltage
from +7.5 V to +26.5 V (+45V transient). The voltage output is
stable under all load/line conditions. However, the designer
must consider ripple and high frequency filtering as well as
regulator response when choosing external components.
Also, the dynamic load characteristics of the microprocessor,
relative to CPU clock frequency changes must be considered.
An additional external pass transistor, for VDDL regulation in
the Boost mode, can be added between protected battery
voltage (see Figure 1) and VDDL, with its base driven by
VDDL_X. In that arrangement the 33394’s core voltage supply
operates over the whole input voltage range VBAT = +4.0 V
to +26.5 V (up to +45V transient). See Table 1 in the
Applications Information section for recommended output
capacitor parameters.
NOTES:
1. The use of an EXTERNAL pass device allows the power
dissipation of the 33394 to be reduced by approximately 50%
and thereby allows the use of a thermally efficient package
such as an HSOP 44 or QFN 44. The base drive control
signal (VDDL_B) is provided by on chip circuitry. The
regulated output voltage sense signal is fed back into the on
chip differential amplifier through pin VDDL_FB. The
collector of this external pass device should be connected to
VPRE to minimize power dissipation and adequately supply
400 mA. Proper thermal mounting considerations must be
accounted for in the PCB design.
2. Backfeeding into the VDDL output can cause problems
during the power up sequence. Refer to the Electrical
Characteristics VDDL Regulator Section for the maximum
allowed backfed current into the VDDL output.
4.8. Keep–Alive/Standby Supply (VKAM)
This linearly regulated Keep Alive Memory voltage supply
tracks the VDDL (+1.25 V to +3.3 V) core voltage, and is
capable of sourcing 50 mA of steady state current from VPRE
during normal microprocessor operation and 12 mA through
KA_VBAT pin during stand–by/sleep mode. The VKAM
regulator output incorporates a current limit short circuit
protection. The output requires a specific range of capacitor
values to be stable under all load/line conditions. See Table 1
in the Applications Information section for recommended
output capacitor parameters.
NOTE :
The source current for the VKAM supply output depends on
the sleep/wake state of the 33394.
4.9. Switched Battery Output (VSEN)
This is a saturated switch output, which tracks the VBAT and
is capable of sourcing 125 mA of steady state current from
VBAT. This regulator will track the voltage VBAT to less than
200 mV, and its output voltage is clamped at +17 V. The gate
voltage of the internal N—channel MOSFET is provided by a
charge pump from VBAT. There is an internal gate–to–source
voltage clamp. This regulator is short circuit protected and has
independent over—temperature protection. If this output is
shorted and goes into thermal shutdown, the normal operation
of all other voltage outputs is not impacted. This output is
controlled by the SPI VSEN bit.
NOTE:
A short to VBAT on VREF1, VREF2, VREF3 or VSEN will
not result in additional current being drawn from the battery
under normal (+8 V to +18 V) voltage levels. Under jumpstart
condition (VBAT = +26.5 V) and during load dump condition,
the device will survive this condition, but additional current
may be drawn from the battery.
4.9.1. VSEN Over Temperature Latch Off Feature
If the VSEN output is shorted to ground for any duration of
time, an over temperature shut down circuit disables the
output source transistor once the local die temperature
exceeds +150
°
C to +190
°
C. The output transistor remains off
until the locally sensed temperature drops 5
°
C to 20
°
C below
F
Freescale Semiconductor, Inc.
For More Information On This Product,
n
.
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