參數(shù)資料
型號(hào): MC56F8356
廠商: Motorola, Inc.
英文描述: 56F8356 16-bit Hybrid Controller
中文描述: 56F8356 16位混合控制器
文件頁(yè)數(shù): 148/160頁(yè)
文件大?。?/td> 1380K
代理商: MC56F8356
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148
56F8356 Technical Data
Preliminary
A, the internal [static component], is comprised of the DC bias currents for the oscillator, PLL,
leakage current, and voltage references. These sources operate independently of processor state or
operating frequency.
B, the internal [state-dependent component], reflects the supply current required by certain on-chip
resources only when those resources are in use. These include RAM, Flash memory and the ADCs.
C, the internal [dynamic component], is classic C*V
2
*F CMOS power dissipation corresponding
to the 56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive
loading on the external pins of the chip. This is also commonly described as C*V
2
*F, although
simulations on two of the IO cell types used on the 56F8356 reveal that the power-versus-load
curve does have a non-zero Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and
frequency at which the outputs change.
Table 10-25
provides coefficients for calculating power
dissipated in the IO cells as a function of capacitive load. In these cases:
TotalPower
=
Σ
((Intercept +Slope*Cload)*frequency/10MHz)
where:
Summation is performed over all output pins with capacitive loads
TotalPower is expressed in mW
Cload is expressed in pF
Because of the low duty cycle on most device pins, power dissipation due to capacitive loads was
found to be fairly low when averaged over a period of time. The one possible exception to this is
if the chip is using the external address and data buses at a rate approaching the maximum system
rate. In this case, power from these buses can be significant.
E, the external [static component], reflects the effects of placing resistive loads on the outputs of
the device. Sum the total of all V
2
/R or IV to arrive at the resistive load contribution to power.
Assume V = 0.5 for the purposes of these rough calculations. For instance, if there is a total of 8
PWM outputs driving 10mA into LEDs, then P = 8*.5*.01 = 40mW.
In previous discussions, power consumption due to parasitics associated with pure input pins is
ignored, as it is assumed to be negligible.
Table 10-25 IO Loading Coefficients at 10MHz
Intercept
Slope
PDU08DGZ_ME
1.3
0.11mW / pF
PDU04DGZ_ME
1.15mW
0.11mW / pF
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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參數(shù)描述
MC56F8356MFV60 制造商:Rochester Electronics LLC 功能描述:- Bulk
MC56F8356MFVE 功能描述:數(shù)字信號(hào)處理器和控制器 - DSP, DSC 16 BIT HYBRID CONTROLLER RoHS:否 制造商:Microchip Technology 核心:dsPIC 數(shù)據(jù)總線寬度:16 bit 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:2 KB 最大時(shí)鐘頻率:40 MHz 可編程輸入/輸出端數(shù)量:35 定時(shí)器數(shù)量:3 設(shè)備每秒兆指令數(shù):50 MIPs 工作電源電壓:3.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-44 安裝風(fēng)格:SMD/SMT
MC56F8356VFV60 功能描述:數(shù)字信號(hào)處理器和控制器 - DSP, DSC 60MHz 60MIPS RoHS:否 制造商:Microchip Technology 核心:dsPIC 數(shù)據(jù)總線寬度:16 bit 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:2 KB 最大時(shí)鐘頻率:40 MHz 可編程輸入/輸出端數(shù)量:35 定時(shí)器數(shù)量:3 設(shè)備每秒兆指令數(shù):50 MIPs 工作電源電壓:3.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-44 安裝風(fēng)格:SMD/SMT
MC56F8356VFVE 功能描述:數(shù)字信號(hào)處理器和控制器 - DSP, DSC 60MHz 60MIPS RoHS:否 制造商:Microchip Technology 核心:dsPIC 數(shù)據(jù)總線寬度:16 bit 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:2 KB 最大時(shí)鐘頻率:40 MHz 可編程輸入/輸出端數(shù)量:35 定時(shí)器數(shù)量:3 設(shè)備每秒兆指令數(shù):50 MIPs 工作電源電壓:3.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-44 安裝風(fēng)格:SMD/SMT
MC56F8357 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16-BIT HYBRID CONTROLLERS