參數(shù)資料
型號： MC68HC705E6
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： HCMOS Microcontroller Unit
中文描述： HCMOS微控制器
文件頁數(shù)： 27/140頁
文件大?。?/td> 788K
代理商： MC68HC705E6
Memory and Registers
EPROM (MC68HC705E6 only)
MC68HC05E6 — Rev. 1.0
Memory and Registers
For More Information On This Product,
Go to: www.freescale.com
EPROM
programming
register (PROG)
ELATCH — EPROM latch control
1 = EPROM address and data buses configured for programming.
0 = EPROM address and data buses configured for normal reads.
Causes address and data buses to be latched when a write to EPROM
is carried out. EPROM cannot be read if ELATCH = 1. This bit should not
be set when no programming voltage is applied to the VPP pin.
EPGM — EPROM program control
1 = Programming power connected to the EPROM array.
0 = Programming power disconnected from the EPROM array.
NOTE:
ELATCH and EPGM cannot be set on the same write operation. EPGM
can only be set if ELATCH is set. EPGM is automatically cleared when
ELATCH is cleared.
EPROM
programming
procedure
The following steps should be taken to program a byte of EPROM:
1.
2.
3.
4.
Apply the programming voltage V
PP
to the IRQ/VPP pin.
Set the ELATCH bit.
Write to the EPROM address.
Set the EPGM bit for a time t
EPGM
to apply the programming
voltage.
Clear the ELATCH bit.
5.
If the address bytes A15–A2 do not change, i.e. all bytes are located
within the same 4 byte address block, then multibyte programming is
permitted. The multibyte programming facility allows 4 bytes of data to
be written to the desired addresses after the ELATCH bit has been set
(see
Table 1
for multibyte programming entry conditions).
NOTE:
The erased state of the EPROM is $00.
Address
bit 7
bit 6
bit 5
bit 4
bit 3
bit 2
bit 1
bit 0
State
on reset
EPROM programming (PROG) $001D
0
0
0
0
0
ELATCH
0
EPGM 0000 0000
3-mem
F
Freescale Semiconductor, Inc.
n
.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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