參數(shù)資料
型號(hào)： MC68HC705E6
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： HCMOS Microcontroller Unit
中文描述： HCMOS微控制器
文件頁數(shù)： 28/140頁
文件大小： 788K
代理商： MC68HC705E6
Memory and Registers
MC68HC05E6 — Rev. 1.0
Memory and Registers
For More Information On This Product,
Go to: www.freescale.com
EEPROM
The 160 byte block of EEPROM is located at address $0100 to $019F.
The EEPROM can be programmed on a single-byte basis by
manipulating the EEPROM programming register at $001C. The voltage
necessary for programming and erasing the internal EEPROM is
generated by an on-chip charge pump. No external programming
voltage is necessary.
NOTE:
The erased state of an EEPROM cell is ‘1’. This means that a write
forces zeroes to the bits specified, whilst bits defined as ones are
unchanged by the write operation.
EEPROM
programming
register (EPROG)
CPEN — Charge pump enable
1 = The charge pump, which produces the internal programming
voltage for the EEPROM, is enabled; the programming voltage
is available as soon as the EEPGM bit is set. The EELATCH
bit should also be set in order that programming can take
place.
0 = The charge pump is disabled.
This bit should always be cleared when the charge pump is not in use.
ER1–ER0 — Erase select bits
ER1 and ER0 form a 2-bit field which is used to select one of three
erase modes: byte, block or bulk.
Table 2
shows the modes selected
for each bit configuration.
In byte erase mode, only the selected byte is erased. In block erase
mode, a 32-byte block of EEPROM is erased (the EEPROM memory
Address
bit 7
bit 6
bit 5
bit 4
bit 3
bit 2
bit 1
bit 0
State
on reset
EEPROM programming
(EPROG)
$001C
0
CPEN
0
ER1
ER0
EELATCH EERC EEPGM0000 0000
4-mem
F
Freescale Semiconductor, Inc.
n
.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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