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| 型號： | MC7448VU867NC |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 46/60頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MPU RISC 32BIT 360-FCCBGA |
| 標(biāo)準(zhǔn)包裝： | 44 |
| 系列： | MPC74xx |
| 處理器類型： | 32-位 MPC74xx PowerPC |
| 速度： | 867MHz |
| 電壓： | 1V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 360-CBGA，F(xiàn)CCBGA |
| 供應(yīng)商設(shè)備封裝： | 360-FCCBGA（25x25） |
| 包裝： | 托盤 |
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MPC7448 RISC Microprocessor Hardware Specifications, Rev. 4
50
Freescale Semiconductor
System Design Information
Shin-Etsu MicroSi, Inc.
888-642-7674
10028 S. 51st St.
Phoenix, AZ 85044
Internet: www.microsi.com
Laird Technologies - Thermal
888-246-905
(formerly Thermagon Inc.)
4707 Detroit Ave.
Cleveland, OH 44102
Internet: www.lairdtech.com
The following section provides a heat sink selection example using one of the commercially available heat
sinks.
9.7.3
Heat Sink Selection Example
For preliminary heat sink sizing, the die-junction temperature can be expressed as follows:
Tj = Ti + Tr + (RθJC + Rθint + Rθsa) × Pd
where:
Tj is the die-junction temperature
Ti is the inlet cabinet ambient temperature
Tr is the air temperature rise within the computer cabinet
RθJC is the junction-to-case thermal resistance
Rθint is the adhesive or interface material thermal resistance
Rθsa is the heat sink base-to-ambient thermal resistance
Pd is the power dissipated by the device
During operation, the die-junction temperatures (Tj) should be maintained less than the value specified in
Table 4. The temperature of air cooling the component greatly depends on the ambient inlet air temperature
and the air temperature rise within the electronic cabinet. An electronic cabinet inlet-air temperature (Ti)
may range from 30
to 40 C. The air temperature rise within a cabinet (Tr) may be in the range of 5 to
10 C. The thermal resistance of the thermal interface material (Rθint) is typically about 1.1 C/W. For
example, assuming a Ti of 30 C, a Tr of 5 C, an HCTE package RθJC = 0.1, and a power consumption
(Pd) of 25.6 W, the following expression for Tj is obtained:
Die-junction temperature:
Tj = 30 C + 5 C + (0.1 C/W + 1.1 C/W + θsa) × 25.6
For this example, a Rθsavalue of 1.53 C/W or less is required to maintain the die junction temperature
below the maximum value of Table 4.
Though the die junction-to-ambient and the heat sink-to-ambient thermal resistances are a common
figure-of-merit used for comparing the thermal performance of various microelectronic packaging
technologies, one should exercise caution when only using this metric in determining thermal management
because no single parameter can adequately describe three-dimensional heat flow. The final die-junction
operating temperature is not only a function of the component-level thermal resistance, but the
system-level design and its operating conditions. In addition to the component's power consumption, a
number of factors affect the final operating die-junction temperature—airflow, board population (local
heat flux of adjacent components), heat sink efficiency, heat sink attach, heat sink placement, next-level
interconnect technology, system air temperature rise, altitude, and so on.
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