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參數(shù)資料
型號(hào)： MCP4716A0T-E/MAY
廠商： Microchip Technology
文件頁數(shù)： 23/86頁
文件大?。?/td> 0K
描述： IC DAC 10BIT NV EEP I2C 6DFN
標(biāo)準(zhǔn)包裝： 1
設(shè)置時(shí)間： 6µs
位數(shù)： 10
數(shù)據(jù)接口： EEPROM，I²C，串行
轉(zhuǎn)換器數(shù)目： 1
電壓電源： 單電源
功率耗散（最大）： 1.10W
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 6-VDFN 裸露焊盤
供應(yīng)商設(shè)備封裝： 6-DFN（2x2）
包裝： 標(biāo)準(zhǔn)包裝
輸出數(shù)目和類型： 1 電壓，單極
采樣率（每秒）： *
其它名稱： MCP4716A0T-E/MAYDKR
2011-2012 Microchip Technology Inc.
DS22272C-page 3
MCP4706/4716/4726
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Voltage on VDD with respect to VSS .......................................................................................................... -0.6V to +6.5V
Voltage on all pins with respect to VSS ..............................................................................................-0.3V to VDD + 0.3V
Input clamp current, IIK (VI < 0, VI > VDD) ............................................................................................................±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD) ..................................................................................................±20 mA
Maximum input current source/sunk by SDA, SCL pins .......................................................................................... 2 mA
Maximum output current sunk by SDA Output pin ................................................................................................. 25 mA
Maximum current out of VSS pin .............................................................................................................................50 mA
Maximum current into VDD pin ................................................................................................................................50 mA
Maximum current sourced by the VOUT pin ............................................................................................................40 mA
Maximum current sunk by the VOUT pin..................................................................................................................40 mA
Maximum current sunk by the VREF pin ...................................................................................................................40 A
Package power dissipation (TA = +50°C, TJ = +150°C)
SOT-23-6...................................................................................................................................................452 mW
DFN-6...................................................................................................................................................... 1098 mW
Storage temperature ............................................................................................................................... -65°C to +150°C
Ambient temperature with power applied ............................................................................................... -55°C to +125°C
ESD protection on all pins............................................................................................................................
≥ 6 kV (HBM)
......................................................................................................................................................................
≥ 400V (MM)
Maximum Junction Temperature (TJ) ................................................................................................................... +150°C
Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
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