Electrical Characterist" />
參數(shù)資料
型號(hào): MCP639T-E/ML
廠商: Microchip Technology
文件頁數(shù): 34/62頁
文件大?。?/td> 0K
描述: IC OP AMP QUAD 24MHZ 16-QFN
標(biāo)準(zhǔn)包裝: 3,300
放大器類型: 通用
電路數(shù): 4
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 10 V/µs
增益帶寬積: 24MHz
電流 - 輸入偏壓: 4pA
電壓 - 輸入偏移: 1800µV
電流 - 電源: 2.5mA
電流 - 輸出 / 通道: 70mA
電壓 - 電源,單路/雙路(±): 2.5 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 16-VQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 16-QFN(4x4)
包裝: 帶卷 (TR)
MCP631/2/3/4/5/9
DS22197B-page 4
2009-2011 Microchip Technology Inc.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA =+25°C, VDD = +2.5V to +5.5V, VSS =GND, VCM =VDD/2,
VOUT VDD/2, VL = VDD/2, RL = 2 k to VL, CL = 50 pF and CS =VSS (refer to Figure 1-2).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
24
MHz
Phase Margin
PM
65
°
G = +1
Open Loop Output Impedance
ROUT
—20
AC Distortion
Total Harmonic Distortion plus Noise
THD+N
0.0015
%
G = +1, VOUT = 2VP-P, f = 1 kHz,
VDD = 5.5V, BW = 80 kHz
Step Response
Rise Time, 10% to 90%
tr
20
ns
G = +1, VOUT = 100 mVP-P
Slew Rate
SR
10
V/s
G = +1
Noise
Input Noise Voltage
Eni
—16
VP-P f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—10
nV/
Hz f = 1 MHz
Input Noise Current Density
ini
4—
fA/
Hz f = 1 kHz
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/
2, VL = VDD/2, RL = 2 k to VL, CL = 50 pF and CS =VSS (refer to Figure 1-1 and Figure 1-2).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
VIL
VSS
—0.2VDD
V
CS Input Current, Low
ICSL
—0.1
nA
CS = 0V
CS High Specifications
CS Logic Threshold, High
VIH
0.8VDD
VDD
V
CS Input Current, High
ICSH
—0.7
A
CS = VDD
GND Current
ISS
-2
-1
—A
CS Internal Pull-Down Resistor
RPD
—5
M
Amplifier Output Leakage
IO(LEAK)
—50—
nA
CS = VDD, TA = +125°C
CS Dynamic Specifications
CS Input Hysteresis
VHYST
0.25
V
CS High to Amplifier Off Time
(output goes High-Z)
tOFF
200
ns
G = +1 V/V, VL = VSS
CS = 0.8VDD to VOUT = 0.1(VDD/2)
CS Low to Amplifier On Time
tON
—2
10
s
G = +1 V/V, VL = VSS,
CS = 0.2VDD to VOUT = 0.9(VDD/2)
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