參數(shù)資料
型號: MG150Q2YS65H
廠商: Toshiba Corporation
英文描述: High Power & High Speed Switching Applications
中文描述: 高功率
文件頁數(shù): 5/6頁
文件大?。?/td> 167K
代理商: MG150Q2YS65H
MG150Q2YS65H
2002-10-04
5
T
R
t
C
C
Charge Q
G
(nC)
V
CE
, V
GE
– Q
G
C
C
Collector-emitter voltage V
CE
(V)
C – V
CE
C
Collector-emitter voltage V
CE
(V)
Short circuit SOA
C
Collector-emitter voltage V
CE
(V)
Reverse bias SOA
Pulse width t
w
(s)
R
th (t)
– t
w
100
0.01
10000
100000
1
100
Cies
Coes
Cres
Common emitter
VGE 0
f 1 MHz
Tc 25°C
1000
0.1
10
0
3
6
0
400
1400
200
800
1200
VCC
900 V
Tj
125°C
tw 5 s
5
4
2
1
600
1000
0.1
1
1000
0
500
1500
Tj
VGE 15 V
RG 5.6
125°C
100
1000
10
0.001
0.001
0.1
1
0.1
10
Diode stage
Transistor stage
Tc 25°C
0.01
0.01
1
G
G
0
0
800
1600
400
1000
Common emitter
RL 4
Tc 25°C
400
1200
200
800
600
8
16
4
12
VCE 0
200 V 400 V 600 V
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