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參數(shù)資料
| 型號(hào)： | MG150Q2YS65H |
| 廠商： | Toshiba Corporation |
| 英文描述： | High Power & High Speed Switching Applications |
| 中文描述： | 高功率 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 167K |
| 代理商： | MG150Q2YS65H |
MG150Q2YS65H
2002-10-04
2
Electrical Characteristics
(Ta 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
20 V, V
CE
0
±500
nA
Collector cut-off current
I
CES
V
CE
1200 V, V
GE
0
2.0
mA
Gate-emitter cut-off voltage
V
GE (OFF)
V
CE
5 V, I
C
150 mA
4.0
7.0
V
Tc 25°C
3.0
4.0
Collector-emitter saturation voltage
V
CE (sat)
I
C
150 A,
V
GE
15 V
Tc 125°C
3.6
V
Input capacitance
C
ies
V
CE
10 V, V
GE
0, f 1 MHz
12800
pF
Turn-on delay time
t
d (on)
0.05
Rise time
t
r
0.05
Turn-on time
t
on
0.10
Turn-off delay time
t
d (off)
0.55
Fall time
t
f
0.05
0.15
Switching time
Turn-off time
t
off
Inductive load
V
CC
600 V, I
C
150A
V
GE
15 V, R
G
5.6
0.60
s
Forward voltage
V
F
I
F
150 A, V
GE
0
2.4
3.5
V
Reverse recovery time
t
rr
I
F
150 A, V
GE
10 V,
di/dt 700 A/ s
0.1
s
Transistor stage
0.14
Thermal resistance
R
th (j-c)
Diode stage
0.28
°C/W
Turn-on
E
on
15
Switching loss
Turn-off
E
off
Inductive load
V
CC
600 V, I
C
150 A
V
GE
15 V, R
G
5.6
Tc 125°C
12
mJ
Note: Switching time measurement circuit and input/output waveforms
I
C
R
G
R
G
L
I
F
V
GE
V
CC
V
CE
V
GE
I
C
0
0
90%
90%
10%
10%
90%
t
d (off)
t
off
t
f
t
r
t
d (on)
t
on
10%
t
rr
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