參數(shù)資料
型號(hào): MG600Q1US41
廠商: Toshiba Corporation
英文描述: Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
中文描述: N通道IGBT的(大功率開(kāi)關(guān),馬達(dá)控制應(yīng)用)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 234K
代理商: MG600Q1US41
MG600Q1US61
2002-10-04
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US61
High Power Switching Applications
Motor Control Applications
High input impedance
High speed: t
f
= 0.3 μs (max)
Inductive load
Low saturation voltage: V
CE (sat)
= 2.6 V (max)
The electrodes are isolated from case.
Enhancement-mode
Equivalent Circuit
Maximum Ratings
(Tc 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
1200
V
Gate-emitter voltage
V
GES
20
V
Collector current
DC (Tc 80°C)
I
C
600
A
Forward current
DC (Tc 80°C)
I
F
600
A
Collector power dissipation
(Tc 25°C)
P
C
5400
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
40 to 125
°C
Isolation voltage
V
isol
2500
(AC 1 minute)
Vrms
Terminal
3
N·m
Screw torque
Mounting
3
N·m
Unit: mm
JEDEC
JEITA
TOSHIBA
2-109F1A
Weight: 465 g (typ.)
G
E
E
C
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