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參數(shù)資料
| 型號： | MG600Q1US41 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes |
| 中文描述： | N通道IGBT的（大功率開關(guān)，馬達控制應(yīng)用） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 234K |
| 代理商： | MG600Q1US41 |
MG600Q1US61
2002-10-04
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
20 V, V
CE
0 V
500
nA
Collector cut-off current
I
CES
V
CE
1200 V, V
GE
0 V
1
mA
Gate-emitter cut-off voltage
V
GE (off)
I
C
600 mA, V
CE
5V
6.0
7.0
8.0
V
Tc 25°C
2.1
2.6
Collector-emitter saturation voltage
V
CE (sat)
I
C
600 A,
V
GE
15 V
Tc 125°C
2.7
3.2
V
Input capacitance
C
ies
V
CE
10 V, V
GE
0 V, f 1 MHz
50000
pF
Turn-on delay time
t
d (on)
0.3
Rise time
t
r
0.2
Turn-on time
t
on
0.5
Turn-off delay time
t
d (off)
0.5
Fall time
t
f
0.1
0.3
Switching time
Turn-off time
t
off
Inductive load
V
CC
600 V
I
C
600 A
V
GE
15 V
R
G
2.0
(Note 1)
0.6
s
Tc 25°C
2.4
2.8
Forward voltage
V
F
I
F
600 A, V
GE
0 V
Tc 125°C
2.2
V
Reverse recovery time
t
rr
I
F
600 A, V
GE
15 V,
di/dt = 1500 A/ s
0.2
s
Transistor stage
0.023
Thermal resistance
R
th (j-c)
Diode stage
0.05
°C/W
Note 1: Switching time and reverse recovery time test circuit and timing chart
I
F
90% I
rr
50% I
rr
I
F
I
rr
t
rr
I
C
R
G
R
G
L
I
F
V
GE
V
CC
V
CE
V
GE
I
C
0
0
90%
90%
10%
10%
90%
t
d (off)
t
off
t
f
t
r
t
d (on)
t
on
10%
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| MG601 | 制造商:Thomas & Betts 功能描述:GUIDE PIN,ALL PKON SERIES |
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