參數(shù)資料
型號: MG600Q1US61
廠商: Toshiba Corporation
英文描述: TOSHIBA IGBT Module Silicon N Channel IGBT
中文描述: 東芝IGBT模塊IGBT的硅?頻道
文件頁數(shù): 6/8頁
文件大?。?/td> 234K
代理商: MG600Q1US61
MG600Q1US61
2002-10-04
6
C
C
C
C
Forward current I
F
(A)
I
rr
, t
rr
– I
F
P
r
R
r
Forward current I
F
(A)
E
dsw
– I
F
R
d
s
Collector-emitter voltage V
CE
(V)
C – V
CE
I
V
C
Collector-emitter voltage V
CE
(V)
Safe operating area
Collector-emitter voltage V
CE
(V)
Reverse bias soa
Pulse width t
w
(s)
R
th (t)
– t
w
T
t
(
10
0
100
200
300
400
500
600
1000
100
VCC 600 V
RG 2
VGE 15 V
: Tj 25°C
: Tj 125°C
trr
Irr
1
0
100
200
300
400
500
600
100
10
VCC 600 V
RG 2
VGE 15 V
: Tj 25°C
: Tj 125°C
300
0.1
10000
100000
1000
5000
50000
500
3000
30000
1
10
100
5
50
0.5
30
3
0.3
Common emitter
f 1 MHz
Tj 25°C
Cies
Coes
Cres
1
3
10
30
100
*
Single nonrepetitive
pulse Tc 25°C
Curves must be with
increase in
temperature.
1000
3000
300
3
10
30
100
300
1000
3000
IC max (pulsed)
*
IC max (continuous)
100 s
*
1 ms
*
50 s
*
Tc 25°C
0.0003
0.001
0.01
0.1
1
10
0.001
0.003
0.01
0.03
0.1
0.3
1
Transistor stage
Diode stage
0
200
400
600
800
1000
1200
1400
10
100
1000
10000
Tj
VGE 15 V
RG 2
125°C
相關(guān)PDF資料
PDF描述
MG600Q1US41 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
MG600Q2YS60A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
MG600 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG600J1US51 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG75J2YS50 Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管)
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