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參數(shù)資料
| 型號： | MGF0911A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | L, S BAND POWER GaAs FET |
| 中文描述： | 升，S波段砷化鎵場效應管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 23K |
| 代理商： | MGF0911A |
MGF0911A
MITSUBISHI SEMICONDUCTOR
GaAs FET
L, S BAND POWER GaAs FET
Nov. ′97
9.4
2-R1.25
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
Class A operation
High output power
P
1dB
=41dBm(TYP)
High power gain
G
LP
=11dB(TYP)
High power added efficiency
η
add
=40%(TYP)
Hermetically sealed metal-ceramic package with ceramic lid
@2.3GHz
@2.3GHz
@2.3GHz,P
1dB
APPLICATION
UHF band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
V
DS
=10V
I
D
=2.6A
Rg=50
Refer to Bias Procedure
OUTLINE DRAWING
Unit:millimeters
GF-21
GATE
SOURCE(FLANGE)
DRAIN
3
2
1
Typ
–
Max
10
–
Min
–
–
-2
Limits
Parameter
Test conditions
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
I
DSS
g
m
V
GS(off)
Saturated drain current
Transconductance
–
-5
A
S
V
–
3.0
dBm
dB
%
C/W
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain *2
–
–
41
11
40
–
40
η
add
R
th(ch-c)
*1:Channel to case *2:Pin=25dBm
Power added efficiency at P
1dB
Thermal resistance *1
10
–
–
4.0
V
DS
=3V,V
GS
=0V
V
DS
=3V,I
D
=2.6A
V
DS
=3V,I
D
=20mA
V
DS
=10V,I
D
2.6A,f=2.3GHz
ABSOLUTE MAXIMUM RATINGS
(T
a
=25C)
Symbol
Parameter
V
GDO
V
GSO
Gate to source voltage
I
D
Drain current
I
GR
I
GF
Forward gate current
Ratings
-15
-15
10
30
63
175
P
T
T
ch
T
stg
Unit
V
V
A
mA
mA
Gate to drain voltage
Total power dissipation *1
Channel temperature
Storage temperature
37.5
-65 to +175
W
C
C
Reverse gate current
*1:TC=25C
P
1dB
G
LP
V
f
method
17.5
1.0
14.3
1
2
2
3
10.0
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