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參數(shù)資料
| 型號： | MGP11N60ED |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 11A，600V Insulated Gate Biploar Transistor with Anti-Parallel Diode（N-Channel Enhancement-Mode Silicon Gate）(帶軟恢復(fù)超快速整流器的絕緣柵雙極性晶體管（N溝道增強型硅門）) |
| 中文描述： | 15 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 145K |
| 代理商： | MGP11N60ED |
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)CES
600
—
—
870
—
—
Vdc
mV/
°
C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ICES
—
—
—
—
10
200
μ
Adc
IGES
—
—
50
μ
Adc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 4.0 Adc)
(VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125
°
C)
(VGE = 15 Vdc, IC = 8.0 Adc)
VCE(on)
—
—
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/
°
C
Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc)
gfe
—
3.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Cies
Coes
Cres
—
779
—
pF
Output Capacitance
—
81
—
Transfer Capacitance
—
13
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
(VCC = 360 Vdc, IC = 8.0 Adc,
VGE = 15 Vdc, L = 300 H,
RG = 20
)
Energy losses include “tail”
8 0 Ad
8 0 Ad
td(on)
tr
td(off)
tf
—
46
—
ns
Rise Time
—
34
—
Turn–Off Delay Time
—
102
—
Fall Time
—
226
—
Turn–Off Switching Loss
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
QT
—
0.32
0.40
mJ
Turn–On Switching Loss
—
0.11
—
Total Switching Loss
—
0.43
—
Turn–On Delay Time
(VCC = 360 Vdc, IC = 8.0 Adc,
VGE = 15 Vdc, L = 300 H
RG = 20
,
TJ = 125 C)
Energy losses include “tail”
8 0 Ad
8 0 Ad
—
42
—
ns
Rise Time
—
26
—
Turn–Off Delay Time
—
214
—
Fall Time
—
228
—
Turn–Off Switching Loss
—
0.48
—
mJ
Turn–On Switching Loss
—
0.16
—
Total Switching Loss
—
0.64
—
Gate Charge
(VCC = 360 Vdc, IC = 8.0 Adc,
VGE = 15 Vdc)
360 Vdc I
8 0 Adc
—
39.2
—
nC
Q1
Q2
—
8.7
—
—
17.4
—
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 3.25 Adc)
(IEC = 3.25 Adc, TJ = 125
°
C)
(IEC = 6.5 Adc)
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
VFEC
—
—
1.7
1.63
1.24
2.0
—
—
2.3
Vdc
(continued)
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