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參數(shù)資料
| 型號： | MGSF1N03LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 |
| 中文描述： | 1600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | MINIATURE, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 183K |
| 代理商： | MGSF1N03LT3G |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/Locations Not Listed
: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN
: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
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ASIA/PACIFIC
: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
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This device has a class 1 ESD rating.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGSF1N03LT3 | CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance:+/-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes |
| MGSF1P02LT1 | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF1P02ELT1 | Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02ELT3 | Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02LT3 | Power MOSFET 750 mAmps, 20 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF1P02 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Power MOSFET P-Channel |
| MGSF1P02ELT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02ELT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02LT1 | 功能描述:MOSFET P-CH 20V 750MA SOT-23 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MGSF1P02LT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 0.75A 3-Pin SOT-23 T/R |
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